Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

In this paper, we report on newly introduced direct extraction methods applied for determining the extrinsic parasitic capacitances and inductances in RF test structures of Fully-Depleted-Silicon-On-Insulator (FDSOI) MOSFETs with a 28 nm gate length. Our approach leverages dummy structures and employs closed-form extraction techniques for precise parasitic parameter determination. Notably, we apply the closed-form extraction strategy for the first time to quantify the parasitic inductances of RF FDSOI-MOSFETs. To verify the accuracy of our extraction results based on a direct approach without optimization, we perform error analysis by comparing the modeled S-parameters of the small signal equivalent circuit to the measured results. Good agreement between the modeled and measured results not only at the cold bias but also at the saturation-mode operation region is achieved up to 110 GHz.