Fe3+ 取代对 CaCu3Ti4O12 包晶的晶体结构和磁性结构的影响:粉末 X 射线和中子衍射研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-11 DOI:10.1007/s10854-024-13766-z
D. J. Parekh, U. M. Meshiya, P. Y. Raval, K. B. Modi, S. Rayaprol
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引用次数: 0

摘要

粉末 X 射线衍射仪 (PXRD) 和中子衍射仪在约 300 K 的温度下对四元透辉石系列 CaCu3-xFe2xTi4-xO12 (x = 0.0、0.1、0.3、0.5 和 0.7)的晶体结构和磁性结构进行了细致的研究。相反,中子衍射剖面分析表明 x = 0.0 和 0.1 成分为单相,而 x = 0.3、0.5 和 0.7 成分则形成了次生马格尼相 Ti6O11。我们对各种结构参数以及阳离子的分布进行了深入研究和讨论。磁自旋结构建立了从反铁磁(x = 0.3)到铁磁(x = 0.5 和 0.7)的相变。实验磁矩与计算磁矩之间的差异表明,x = 0.3-0.7 成分的自旋结构是不共线的。
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Influence of Fe3+ substitution on crystallographic and magnetic structures of CaCu3Ti4O12 perovskites: powder X-ray and neutron diffraction studies

Crystallographic and magnetic structures of quadruple perovskite series, CaCu3-xFe2xTi4-xO12 (x = 0.0, 0.1, 0.3, 0.5, and 0.7), have been meticulously examined by powder X-ray diffractometry (PXRD) and neutron diffraction at ~ 300 K. The Rietveld refinement of PXRD profiles verified monophasic formation for all the compositions. Contrarily, analysis of neutron diffraction profiles revealed a single-phase nature for x = 0.0 and 0.1 compositions while for x = 0.3, 0.5, and 0.7 compositions, formation of a secondary Magneli phase, Ti6O11. Various structural parameters in conjunction with the distribution of cations have been resolute and discussed in depth. The magnetic spin structure established an anti-ferromagnetic (x = 0.3) to ferromagnetic (x = 0.5 and 0.7) phase transition. The disparity between the experimental and calculated magnetic moment is an inkling of a spin structure to be non-collinear for x = 0.3–0.7 compositions.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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