{"title":"氧化物缩放对感应开关闪存电池电离辐射响应的影响","authors":"Hui Shi, Yinquan Wang, Lichao Cao, Genshen Hong, Ruocheng Zheng, Hejun Xu, Yi Wang, Rubin Xie","doi":"10.1016/j.microrel.2024.115546","DOIUrl":null,"url":null,"abstract":"<div><div>The effect of tunnel oxide and Oxide/Nitride/Oxide (ONO) thinning on the total ionising dose (TID) response of Sense-Switch flash cells is investigated by gamma-ray radiation. The threshold voltage shift of the programmed-state cell is reduced, while the threshold voltage shift of the erased-state cell is increased when oxide thickness is scaled down. A new physical model is developed to express the oxide thickness dependence on threshold voltage shift. The radiation mechanisms dominating the TID response are determined by model fitting and parameter extraction. For the programmed-state flash cell, the hole trapping and injection rates are reduced as the oxide thickness decreases, which leads to a smaller threshold voltage shift. However, the increased hole emission rate for the erased flash cell is responsible for the more significant threshold voltage shift.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"163 ","pages":"Article 115546"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of oxide scaling on ionising radiation response of sense-switch flash cells\",\"authors\":\"Hui Shi, Yinquan Wang, Lichao Cao, Genshen Hong, Ruocheng Zheng, Hejun Xu, Yi Wang, Rubin Xie\",\"doi\":\"10.1016/j.microrel.2024.115546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The effect of tunnel oxide and Oxide/Nitride/Oxide (ONO) thinning on the total ionising dose (TID) response of Sense-Switch flash cells is investigated by gamma-ray radiation. The threshold voltage shift of the programmed-state cell is reduced, while the threshold voltage shift of the erased-state cell is increased when oxide thickness is scaled down. A new physical model is developed to express the oxide thickness dependence on threshold voltage shift. The radiation mechanisms dominating the TID response are determined by model fitting and parameter extraction. For the programmed-state flash cell, the hole trapping and injection rates are reduced as the oxide thickness decreases, which leads to a smaller threshold voltage shift. However, the increased hole emission rate for the erased flash cell is responsible for the more significant threshold voltage shift.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"163 \",\"pages\":\"Article 115546\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002269\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002269","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
通过伽马射线辐射研究了隧道氧化物和氧化物/氮化物/氧化物（ONO）减薄对感应开关闪存电池总电离剂量（TID）响应的影响。当氧化物厚度减薄时，编程态电池的阈值电压偏移减小，而擦除态电池的阈值电压偏移增大。我们建立了一个新的物理模型来表达氧化层厚度对阈值电压偏移的影响。通过模型拟合和参数提取，确定了主导 TID 响应的辐射机制。对于编程态闪存电池，空穴捕获率和注入率随着氧化物厚度的减小而降低，从而导致阈值电压偏移变小。然而，擦除闪存电池的空穴发射率增加，导致了更显著的阈值电压偏移。
The effect of oxide scaling on ionising radiation response of sense-switch flash cells
The effect of tunnel oxide and Oxide/Nitride/Oxide (ONO) thinning on the total ionising dose (TID) response of Sense-Switch flash cells is investigated by gamma-ray radiation. The threshold voltage shift of the programmed-state cell is reduced, while the threshold voltage shift of the erased-state cell is increased when oxide thickness is scaled down. A new physical model is developed to express the oxide thickness dependence on threshold voltage shift. The radiation mechanisms dominating the TID response are determined by model fitting and parameter extraction. For the programmed-state flash cell, the hole trapping and injection rates are reduced as the oxide thickness decreases, which leads to a smaller threshold voltage shift. However, the increased hole emission rate for the erased flash cell is responsible for the more significant threshold voltage shift.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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