{"title":"嵌入式 LaB6 铋空心阴极的实验和零维模拟研究","authors":"Dongsheng Cai , Pingyang Wang , Zhiwei Hua","doi":"10.1016/j.vacuum.2024.113807","DOIUrl":null,"url":null,"abstract":"<div><div>Experiments and zero-dimensional simulation were conducted to evaluate the discharge performance of an embedded bismuth LaB<sub>6</sub> hollow cathode. The experimental results demonstrate that the embedded bismuth hollow cathode can operate in diode mode without any external heating, with a mass flow rate of approximately 0.21 mg/s. In Keeper-cathode mode, the discharge voltage for bismuth was slightly lower than that of xenon and exhibited strong stability, with a maximum discharge variation of less than 0.5 V at a discharge current of 2 A. The simulation results showed that at the same mass flow rate, the electron and ion densities in the insert region of the bismuth hollow cathode were higher than those of xenon, whereas the opposite was true for the orifice region. Notably, at discharge currents below 4 A, the power deposition of bismuth in both the insert and orifice regions was lower than that of xenon, indicating reduced erosion.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"231 ","pages":"Article 113807"},"PeriodicalIF":3.8000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental and zero-dimensional simulation study of an embedded bismuth LaB6 hollow cathode\",\"authors\":\"Dongsheng Cai , Pingyang Wang , Zhiwei Hua\",\"doi\":\"10.1016/j.vacuum.2024.113807\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Experiments and zero-dimensional simulation were conducted to evaluate the discharge performance of an embedded bismuth LaB<sub>6</sub> hollow cathode. The experimental results demonstrate that the embedded bismuth hollow cathode can operate in diode mode without any external heating, with a mass flow rate of approximately 0.21 mg/s. In Keeper-cathode mode, the discharge voltage for bismuth was slightly lower than that of xenon and exhibited strong stability, with a maximum discharge variation of less than 0.5 V at a discharge current of 2 A. The simulation results showed that at the same mass flow rate, the electron and ion densities in the insert region of the bismuth hollow cathode were higher than those of xenon, whereas the opposite was true for the orifice region. Notably, at discharge currents below 4 A, the power deposition of bismuth in both the insert and orifice regions was lower than that of xenon, indicating reduced erosion.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"231 \",\"pages\":\"Article 113807\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X24008534\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X24008534","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Experimental and zero-dimensional simulation study of an embedded bismuth LaB6 hollow cathode
Experiments and zero-dimensional simulation were conducted to evaluate the discharge performance of an embedded bismuth LaB6 hollow cathode. The experimental results demonstrate that the embedded bismuth hollow cathode can operate in diode mode without any external heating, with a mass flow rate of approximately 0.21 mg/s. In Keeper-cathode mode, the discharge voltage for bismuth was slightly lower than that of xenon and exhibited strong stability, with a maximum discharge variation of less than 0.5 V at a discharge current of 2 A. The simulation results showed that at the same mass flow rate, the electron and ion densities in the insert region of the bismuth hollow cathode were higher than those of xenon, whereas the opposite was true for the orifice region. Notably, at discharge currents below 4 A, the power deposition of bismuth in both the insert and orifice regions was lower than that of xenon, indicating reduced erosion.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.