掺 La 的 BaZrO3 的结构、形态、介电和光电特性研究:实验和 DFT 分析

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-20 DOI:10.1007/s10854-024-13878-6
Ahmad Ayyaz, G. Murtaza, Huda Alkhaldi, Haya Alhummiany, Akhlaq Ahmed, Hisham S. M. Abd-Rabboh, Q. Mahmood, M. S. Al-Buriahi, H. Elhosiny Ali
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引用次数: 0

摘要

本研究采用固态反应法制备了 Ba1-xLaxZrO3 (x = 0, 0.04, 0.08, 0.12, 0.16) 样品。通过对 XRD 图谱的分析,确定了样品为空间群为 Pm3m 的立方结构,并通过 Rietveld 精炼确定了晶格参数。密度泛函理论(DFT)被用来研究电子能带结构和状态密度。场发射扫描电子显微镜(FESEM)用于研究样品的表面形貌,并计算出 0.2 至 0.8 微米范围内的平均晶粒尺寸。傅立叶变换红外光谱(FTIR)观察到所有样品中都存在功能键。电化学阻抗光谱(EIS)在高频区域进行了介电和阻抗测量。利用密度泛函理论(DFT)计算了纯 BaZrO3 和 Ba1-xLaxZrO3 (x = 0.12) 的电子和光学特性。BaZrO3 的间接带隙为 3.52 eV,而 Ba1-xLaxZrO3 (x = 0.12) 的直接带隙为 3.36 eV。掺杂 La 后,带隙从间接带隙转变为直接带隙。对介电常数、吸收系数、反射率、折射率、光导率和光损耗等光学特性进行了研究,发现 Ba1-xLaxZrO3 (x = 0.12) 在紫外线范围内具有良好的光学响应。这一分析表明,Ba1-xLaxZrO3 是紫外光伏和光电探测器的合适候选材料。
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Investigation of structure, morphology, dielectric, and optoelectronic properties of La-doped BaZrO3: experimental and DFT analysis

In this work, Ba1-xLaxZrO3 (x = 0, 0.04, 0.08, 0.12, 0.16) samples were prepared using a solid-state reaction method. The analysis of XRD patterns ensured the cubic structures with space group Pm3m and lattice parameters by Rietveld refinement. The density functional theory (DFT) has been employed to study the electronic band structure and density of states. The field emission scanning electron microscope (FESEM) is used to investigate the surface morphology of studied samples and calculate the average grain size in the 0.2 to 0.8 µm range. Fourier transform infrared (FTIR) spectroscopy observes the existence of functional bonding in all samples. The dielectric and impedance measurements have been carried out using electrochemical impedance spectroscopy (EIS) in the high-frequency region. The electronic and optical of pure BaZrO3 and Ba1-xLaxZrO3 (x = 0.12) are computed by density functional theory (DFT) calculations. The BaZrO3 has an indirect band gap of 3.52 eV, whereas Ba1-xLaxZrO3 (x = 0.12) reveals a direct band gap of 3.36 eV. The band gap transitions from an indirect to a direct band gap with La-doping. The optical characteristics, such as dielectric constants, absorption coefficient, reflection, refractive index, optical conductivity, and optical loss, are investigated, and Ba1-xLaxZrO3 (x = 0.12) responds optically well to the ultraviolet range. This analysis suggests that Ba1-xLaxZrO3 is a suitable candidate for UV-based photovoltaics and photodetectors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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