基于 Ag2S 的晶圆级晶膜横条阵列，超低开关能量可达生物突触

IF 26.6 1区材料科学 Q1 Engineering Nano-Micro Letters Pub Date : 2024-11-22 DOI:10.1007/s40820-024-01559-2

Yuan Zhu, Tomas Nyberg, Leif Nyholm, Daniel Primetzhofer, Xun Shi, Zhen Zhang

{"title":"基于 Ag2S 的晶圆级晶膜横条阵列，超低开关能量可达生物突触","authors":"Yuan Zhu, Tomas Nyberg, Leif Nyholm, Daniel Primetzhofer, Xun Shi, Zhen Zhang","doi":"10.1007/s40820-024-01559-2","DOIUrl":null,"url":null,"abstract":"<div><h2>Highlights</h2><div>\n \n \n<ul>\n <li>\n <p>Wafer-scale integration of Ag<sub>2</sub>S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C.</p>\n </li>\n <li>\n <p>A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved.</p>\n </li>\n <li>\n <p>The energy-efficient resistance switching was enabled by self-supply of mobile Ag<sup>+</sup> ions in Ag<sub>2</sub>S electrolytes and low silver-nucleation barrier at Ag/Ag<sub>2</sub>S interface.</p>\n </li>\n </ul>\n </div></div>","PeriodicalId":714,"journal":{"name":"Nano-Micro Letters","volume":"17 1","pages":""},"PeriodicalIF":26.6000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-024-01559-2.pdf","citationCount":"0","resultStr":"{\"title\":\"Wafer-Scale Ag2S-Based Memristive Crossbar Arrays with Ultra-Low Switching-Energies Reaching Biological Synapses\",\"authors\":\"Yuan Zhu, Tomas Nyberg, Leif Nyholm, Daniel Primetzhofer, Xun Shi, Zhen Zhang\",\"doi\":\"10.1007/s40820-024-01559-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><h2>Highlights</h2><div>\\n \\n \\n<ul>\\n <li>\\n <p>Wafer-scale integration of Ag<sub>2</sub>S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C.</p>\\n </li>\\n <li>\\n <p>A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved.</p>\\n </li>\\n <li>\\n <p>The energy-efficient resistance switching was enabled by self-supply of mobile Ag<sup>+</sup> ions in Ag<sub>2</sub>S electrolytes and low silver-nucleation barrier at Ag/Ag<sub>2</sub>S interface.</p>\\n </li>\\n </ul>\\n </div></div>\",\"PeriodicalId\":714,\"journal\":{\"name\":\"Nano-Micro Letters\",\"volume\":\"17 1\",\"pages\":\"\"},\"PeriodicalIF\":26.6000,\"publicationDate\":\"2024-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s40820-024-01559-2.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano-Micro Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40820-024-01559-2\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano-Micro Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40820-024-01559-2","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

亮点：采用兼容互补金属氧化物半导体（CMOS）工艺，在低于 160 ℃ 的温度下实现了基于 Ag2S 的忆阻横条阵列的晶圆级集成。在晶圆级 CMOS 兼容忆阻器单元中，实现了创纪录的低阈值灯丝形成电压和达到生物突触的超低开关能量。 Ag2S 电解质中移动 Ag+ 离子的自我供应和 Ag/Ag2S 界面的低银核屏障使这种高能效电阻开关成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Wafer-Scale Ag2S-Based Memristive Crossbar Arrays with Ultra-Low Switching-Energies Reaching Biological Synapses

Highlights

Wafer-scale integration of Ag₂S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C.
A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved.
The energy-efficient resistance switching was enabled by self-supply of mobile Ag⁺ ions in Ag₂S electrolytes and low silver-nucleation barrier at Ag/Ag₂S interface.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.