Baoqi Wu , Zhihao Wang , Zhanshou Wang , Jianyuan Yu , Hongli Zhao
{"title":"优化通过改进型常压化学气相沉积直接合成 SnSe2 薄膜的生长条件","authors":"Baoqi Wu , Zhihao Wang , Zhanshou Wang , Jianyuan Yu , Hongli Zhao","doi":"10.1016/j.optmat.2024.116467","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, high-quality tin diselenide (SnSe<sub>2</sub>) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time, enabled the realization of films exhibiting exceptional crystallographic and optical properties. Notably, the growth temperature was found to significantly influence the SnSe<sub>2</sub> film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation, 24.6 % transmittance, an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications. This study provides valuable insights for the large-scale production of high-performance SnSe<sub>2</sub> thin films suitable for electronic and optoelectronic applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"158 ","pages":"Article 116467"},"PeriodicalIF":3.8000,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition\",\"authors\":\"Baoqi Wu , Zhihao Wang , Zhanshou Wang , Jianyuan Yu , Hongli Zhao\",\"doi\":\"10.1016/j.optmat.2024.116467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, high-quality tin diselenide (SnSe<sub>2</sub>) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time, enabled the realization of films exhibiting exceptional crystallographic and optical properties. Notably, the growth temperature was found to significantly influence the SnSe<sub>2</sub> film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation, 24.6 % transmittance, an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications. This study provides valuable insights for the large-scale production of high-performance SnSe<sub>2</sub> thin films suitable for electronic and optoelectronic applications.</div></div>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":\"158 \",\"pages\":\"Article 116467\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925346724016501\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346724016501","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition
In this study, high-quality tin diselenide (SnSe2) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time, enabled the realization of films exhibiting exceptional crystallographic and optical properties. Notably, the growth temperature was found to significantly influence the SnSe2 film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation, 24.6 % transmittance, an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications. This study provides valuable insights for the large-scale production of high-performance SnSe2 thin films suitable for electronic and optoelectronic applications.
期刊介绍：
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.
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