{"title":"掺铜 Ca0.61Nd0.26TiO3 陶瓷中 Ti4+ 的抗还原性和更高的品质因数","authors":"Dawei Gao, Juncheng Ma, Jiafen Zhang, Qingang Shi, Zhe Xiong, Xing Zhang, Bin Tang","doi":"10.1007/s10854-024-13938-x","DOIUrl":null,"url":null,"abstract":"<div><p>The occurrence of \"dark holes\" is a common phenomenon in TiO<sub>2</sub>-based ceramics, resulting from the reduction of Ti<sup>4+</sup> under high-temperature and low-oxygen partial pressure sintering conditions. To achieve low dielectric loss, Ca<sub>0.61</sub>Nd<sub>0.26</sub>Ti<sub>1-<i>x</i></sub>Cu<sub><i>x</i></sub>O<sub>3</sub> ceramics were designed and prepared in this work. The results indicate that moderate doping of CuO not only enhances insulation resistivity and <i>Q</i> × <i>f</i> value but also reduces the positive <i>τ</i><sub><i>f</i></sub> value. The Ca<sub>0.61</sub>Nd<sub>0.26</sub>Ti<sub>0.98</sub>Cu<sub>0.02</sub>O<sub>3</sub> sample exhibited the highest <i>Q</i> × <i>f</i> value of 16,895 GHz, contributing to the miniaturization and insertion loss of microwave devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Anti-reduction of Ti4+ and improved quality factor in Cu-doped Ca0.61Nd0.26TiO3 ceramics\",\"authors\":\"Dawei Gao, Juncheng Ma, Jiafen Zhang, Qingang Shi, Zhe Xiong, Xing Zhang, Bin Tang\",\"doi\":\"10.1007/s10854-024-13938-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The occurrence of \\\"dark holes\\\" is a common phenomenon in TiO<sub>2</sub>-based ceramics, resulting from the reduction of Ti<sup>4+</sup> under high-temperature and low-oxygen partial pressure sintering conditions. To achieve low dielectric loss, Ca<sub>0.61</sub>Nd<sub>0.26</sub>Ti<sub>1-<i>x</i></sub>Cu<sub><i>x</i></sub>O<sub>3</sub> ceramics were designed and prepared in this work. The results indicate that moderate doping of CuO not only enhances insulation resistivity and <i>Q</i> × <i>f</i> value but also reduces the positive <i>τ</i><sub><i>f</i></sub> value. The Ca<sub>0.61</sub>Nd<sub>0.26</sub>Ti<sub>0.98</sub>Cu<sub>0.02</sub>O<sub>3</sub> sample exhibited the highest <i>Q</i> × <i>f</i> value of 16,895 GHz, contributing to the miniaturization and insertion loss of microwave devices.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13938-x\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13938-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Anti-reduction of Ti4+ and improved quality factor in Cu-doped Ca0.61Nd0.26TiO3 ceramics
The occurrence of "dark holes" is a common phenomenon in TiO2-based ceramics, resulting from the reduction of Ti4+ under high-temperature and low-oxygen partial pressure sintering conditions. To achieve low dielectric loss, Ca0.61Nd0.26Ti1-xCuxO3 ceramics were designed and prepared in this work. The results indicate that moderate doping of CuO not only enhances insulation resistivity and Q × f value but also reduces the positive τf value. The Ca0.61Nd0.26Ti0.98Cu0.02O3 sample exhibited the highest Q × f value of 16,895 GHz, contributing to the miniaturization and insertion loss of microwave devices.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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