{"title":"锂植入对二氧化钛薄膜结构和光物理性质的影响","authors":"Sulakshana Mondal, Amaresh Das, Durga Basak","doi":"10.1007/s10854-024-13926-1","DOIUrl":null,"url":null,"abstract":"<div><p>We investigated here the effect of defects on the structural and photophysical properties of TiO<sub>2</sub> films implanted with Li ions with fluences from 1 × 10<sup>14</sup> to 1 × 10<sup>15</sup> ions/cm<sup>2</sup>. All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti<sup>3+</sup> species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti<sup>3+</sup> defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO<sub>2</sub> films after Li implantation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact on the structural and photophysical properties of TiO2 films owing to Li implantation\",\"authors\":\"Sulakshana Mondal, Amaresh Das, Durga Basak\",\"doi\":\"10.1007/s10854-024-13926-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We investigated here the effect of defects on the structural and photophysical properties of TiO<sub>2</sub> films implanted with Li ions with fluences from 1 × 10<sup>14</sup> to 1 × 10<sup>15</sup> ions/cm<sup>2</sup>. All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti<sup>3+</sup> species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti<sup>3+</sup> defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO<sub>2</sub> films after Li implantation.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13926-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13926-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impact on the structural and photophysical properties of TiO2 films owing to Li implantation
We investigated here the effect of defects on the structural and photophysical properties of TiO2 films implanted with Li ions with fluences from 1 × 1014 to 1 × 1015 ions/cm2. All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti3+ species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti3+ defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO2 films after Li implantation.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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