MnPX3单层中可控半金属丰度

Ni Wang, Ju Chen, Yipeng An, Qingfeng Zhan, Shi-Jing Gong
{"title":"MnPX3单层中可控半金属丰度","authors":"Ni Wang, Ju Chen, Yipeng An, Qingfeng Zhan, Shi-Jing Gong","doi":"10.1038/s44306-024-00065-w","DOIUrl":null,"url":null,"abstract":"Modulable electronic and magnetic structures significantly extend the properties and applications of two-dimensional (2D) materials. 2D antiferromagnets (AFM) can even become ferromagnets (FM) by various approaches, which ignites growing research interests in 2D AFM. Through first-principles calculations, we find that the adsorption of Li (electron doping) and F (hole doping) on the surface of MnPSe3 can induce half-metallicity with opposite spin polarizations. The adsorption site, concentration, charge transfer, and the exchange energy are investigated in detail, indicating the robustness of half-metallicity. At the interface of MnPS3/Au(111) heterostructure, we find electrons transfer from Au(111) to MnPS3, forming the Ohmic contact and inducing AFM-FM transition. All our results show that ferromagnetic MnPX3 (X = S and Se) monolayer with half-metallicity can be easily obtained, which may be of great significance in 2D spintronic materials and devices.","PeriodicalId":501713,"journal":{"name":"npj Spintronics","volume":" ","pages":"1-7"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44306-024-00065-w.pdf","citationCount":"0","resultStr":"{\"title\":\"Controllable half-metallicity in MnPX3 monolayer\",\"authors\":\"Ni Wang, Ju Chen, Yipeng An, Qingfeng Zhan, Shi-Jing Gong\",\"doi\":\"10.1038/s44306-024-00065-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modulable electronic and magnetic structures significantly extend the properties and applications of two-dimensional (2D) materials. 2D antiferromagnets (AFM) can even become ferromagnets (FM) by various approaches, which ignites growing research interests in 2D AFM. Through first-principles calculations, we find that the adsorption of Li (electron doping) and F (hole doping) on the surface of MnPSe3 can induce half-metallicity with opposite spin polarizations. The adsorption site, concentration, charge transfer, and the exchange energy are investigated in detail, indicating the robustness of half-metallicity. At the interface of MnPS3/Au(111) heterostructure, we find electrons transfer from Au(111) to MnPS3, forming the Ohmic contact and inducing AFM-FM transition. All our results show that ferromagnetic MnPX3 (X = S and Se) monolayer with half-metallicity can be easily obtained, which may be of great significance in 2D spintronic materials and devices.\",\"PeriodicalId\":501713,\"journal\":{\"name\":\"npj Spintronics\",\"volume\":\" \",\"pages\":\"1-7\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s44306-024-00065-w.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"npj Spintronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44306-024-00065-w\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Spintronics","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44306-024-00065-w","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

可调制的电子和磁性结构显著地扩展了二维(2D)材料的性质和应用。二维反铁磁体(AFM)甚至可以通过各种途径转变为铁磁体(FM),这引起了人们对二维反铁磁体的研究兴趣。通过第一性原理计算,我们发现Li(电子掺杂)和F(空穴掺杂)在MnPSe3表面的吸附可以诱导具有相反自旋极化的半金属性。详细考察了半金属丰度的吸附位置、浓度、电荷转移和交换能,表明了半金属丰度的稳健性。在MnPS3/Au(111)异质结构界面处,电子从Au(111)向MnPS3转移,形成欧姆接触,诱发AFM-FM跃迁。这些结果表明,可以很容易地获得具有半金属丰度的铁磁性MnPX3 (X = S和Se)单层,这在二维自旋电子材料和器件中具有重要意义。
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Controllable half-metallicity in MnPX3 monolayer
Modulable electronic and magnetic structures significantly extend the properties and applications of two-dimensional (2D) materials. 2D antiferromagnets (AFM) can even become ferromagnets (FM) by various approaches, which ignites growing research interests in 2D AFM. Through first-principles calculations, we find that the adsorption of Li (electron doping) and F (hole doping) on the surface of MnPSe3 can induce half-metallicity with opposite spin polarizations. The adsorption site, concentration, charge transfer, and the exchange energy are investigated in detail, indicating the robustness of half-metallicity. At the interface of MnPS3/Au(111) heterostructure, we find electrons transfer from Au(111) to MnPS3, forming the Ohmic contact and inducing AFM-FM transition. All our results show that ferromagnetic MnPX3 (X = S and Se) monolayer with half-metallicity can be easily obtained, which may be of great significance in 2D spintronic materials and devices.
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