{"title":"80k ~ 340k温度范围内无结GAA Si VNW pmosfet直流和低频噪声参数的研究","authors":"A. Tahiat , B. Cretu , A. Veloso , E. Simoen","doi":"10.1016/j.sse.2025.109068","DOIUrl":null,"url":null,"abstract":"<div><div>In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics. Current-voltage I-V characteristics in linear operation regime in forward and reverse operation modes are analyzed in a wide range of temperatures from 80 K up to 340 K. In addition to that Low Frequency Noise (LFN) was also studied as a function of the temperature. The main DC and LFN results are presented, showing unusual low field mobility degradation and LFN enhancement for lower temperatures. A correlation was found between the low field mobility degradation and the low frequency noise increasing at low temperature operation, suggesting a strong impact of coulomb scattering on both parameters at low temperatures.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109068"},"PeriodicalIF":1.4000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K\",\"authors\":\"A. Tahiat , B. Cretu , A. Veloso , E. Simoen\",\"doi\":\"10.1016/j.sse.2025.109068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics. Current-voltage I-V characteristics in linear operation regime in forward and reverse operation modes are analyzed in a wide range of temperatures from 80 K up to 340 K. In addition to that Low Frequency Noise (LFN) was also studied as a function of the temperature. The main DC and LFN results are presented, showing unusual low field mobility degradation and LFN enhancement for lower temperatures. A correlation was found between the low field mobility degradation and the low frequency noise increasing at low temperature operation, suggesting a strong impact of coulomb scattering on both parameters at low temperatures.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"225 \",\"pages\":\"Article 109068\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125000139\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/1/22 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000139","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/1/22 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K
In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics. Current-voltage I-V characteristics in linear operation regime in forward and reverse operation modes are analyzed in a wide range of temperatures from 80 K up to 340 K. In addition to that Low Frequency Noise (LFN) was also studied as a function of the temperature. The main DC and LFN results are presented, showing unusual low field mobility degradation and LFN enhancement for lower temperatures. A correlation was found between the low field mobility degradation and the low frequency noise increasing at low temperature operation, suggesting a strong impact of coulomb scattering on both parameters at low temperatures.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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