掺铒ZnO薄膜硅基发光器件的电致发光:锂共掺杂的增强效应

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-18 DOI:10.1007/s10854-025-14427-5
Chengtao Xia, Tong Zhao, Ran Ji, Deren Yang, Xiangyang Ma
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引用次数: 0

摘要

我们用Au/Mg0.4Zn0.6O/ZnO:Er/n+-Si结构的发光器件(LED)实现了与铒相关的可见光和近红外电致发光(EL)。其中,ZnO:Er为掺杂Er的ZnO薄膜。为了增强这种LED的Er相关发射,我们提出了一种将锂(Li)共掺杂到ZnO:Er薄膜中的策略。通过优化li共掺杂含量,er相关的可见光和近红外发射强度分别提高了8倍和2倍以上。密度泛函理论计算表明,锂共掺杂导致发光Er3+离子周围的晶体场更加对称,这不利于Er3+离子在4f内跃迁概率的增加。然而,我们发现li共掺杂导致ZnO晶粒的平均尺寸从26 nm增加到47 nm,从而显著减少了Er3+离子在晶界的偏析。此外,Li+离子的离子半径(68 pm)比Er3+离子(88.1 pm)更小,这在能量上有利于Er3+离子掺入ZnO晶粒。因此,锂共掺杂增加了ZnO:Er薄膜中光学活性Er3+离子的数量,这实际上是由稳态和瞬态光致发光表征所证实的。综上所述,由于li共掺杂导致的ZnO晶粒变粗,以及Er3+离子进入ZnO晶粒的促进,都是导致EL显著增强的原因。
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Electroluminescence from silicon-based light-emitting devices with erbium-doped ZnO films: enhancement effect of lithium codoping

We have realized the erbium (Er)-related visible and near-infrared (NIR) electroluminescence (EL) from the light-emitting device (LED) with an Au/Mg0.4Zn0.6O/ZnO:Er/n+-Si structure. Herein, ZnO:Er refers to the Er-doped ZnO film. In order to enhance the Er-related emissions from such a LED, we present a strategy of codoping lithium (Li) into the ZnO:Er film. Through the optimization of the Li-codoping content, the Er-related visible and NIR emission intensities can be enhanced by more than 8 and 2 times, respectively. Density functional theory calculations reveal that the Li-codoping results in more symmetrical crystal fields around the luminescent Er3+ ions, which is not favorable for the increase in the intra-4f transition probabilities of Er3+ ions. Nevertheless, it is found that the Li-codoping leads to the increase in the average size of ZnO grains from 26 to 47 nm, thus significantly reducing the segregation of Er3+ ions at grain boundaries. Moreover, the smaller ionic radius of Li+ ions (68 pm) with respect to that of Er3+ ions (88.1 pm) is believed to be energetically favorable for the incorporation of Er3+ ions into ZnO grains. Accordingly, the Li-codoping increases the number of optically active Er3+ ions in the ZnO:Er film, which is actually verified by the steady-state and transient photoluminescence characterizations. In brief, both the coarsened ZnO grains and the promoted accommodation of Er3+ ions into ZnO grains, resulted from the Li-codoping, are responsible for the significantly enhanced EL as mentioned above.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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