Jianqi Wang, Yang Wang, Zhou Chen, Changyang Wang, Jilong Yang, Jian Yang, Jian Gu, Quan Li
{"title":"具有高效微波吸收性能的ni改性pcs衍生（SiC）p复合材料Ni@SiC","authors":"Jianqi Wang, Yang Wang, Zhou Chen, Changyang Wang, Jilong Yang, Jian Yang, Jian Gu, Quan Li","doi":"10.1007/s10854-025-14448-0","DOIUrl":null,"url":null,"abstract":"<div><p>Silicon carbide (SiC) presents significant application prospects in the light of wave-absorbing, attributed to its excellent electrical and physicochemical properties. By utilizing the synergistic loss mechanism, SiC compounding with the magnetic can markedly enhance the absorption efficiency of electromagnetic wave (EMW) which is an important technical mean to optimize the wave-absorbing capabilities. In this paper, polycarbosilane (PCS) was used as a precursor to prepare (SiC)<sub>p</sub> and Ni@SiC composites were successfully synthesized by chemical plating without palladium activation, in order to explore the lightweight SiC-based wave-absorbing material that exhibits intense absorption and wide bandwidth. It is shown that when the (SiC)<sub>p</sub> is about 60 μm, the A2-Ni@SiC demonstrates the minimum reflection loss (RL<sub>min</sub>) of −50.27 dB at 8.04 GHz with an effective absorption bandwidth (EAB) of 5.64 GHz at 3.0 mm (from 7.24 to 12.88 GHz). When the particle size of (SiC)<sub>p</sub> is further refined to about 5 μm, the prepared B2-Ni@SiC shows exceptional wave-absorbing performance achieving the RL<sub>min</sub> of −66.10 dB at 3.4 mm, along with an EAB of 4.44 GHz (from 5.56 to 10.0 GHz). The enhancement in wave-absorbing is likely due to the increased interfacial polarization at the Ni-(SiC)<sub>p</sub> interface, as well as the improved matching of the hybridized constituents.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ni@SiC composites from Ni-modified PCS-derived (SiC)p with high-efficiency microwave absorption properties\",\"authors\":\"Jianqi Wang, Yang Wang, Zhou Chen, Changyang Wang, Jilong Yang, Jian Yang, Jian Gu, Quan Li\",\"doi\":\"10.1007/s10854-025-14448-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Silicon carbide (SiC) presents significant application prospects in the light of wave-absorbing, attributed to its excellent electrical and physicochemical properties. By utilizing the synergistic loss mechanism, SiC compounding with the magnetic can markedly enhance the absorption efficiency of electromagnetic wave (EMW) which is an important technical mean to optimize the wave-absorbing capabilities. In this paper, polycarbosilane (PCS) was used as a precursor to prepare (SiC)<sub>p</sub> and Ni@SiC composites were successfully synthesized by chemical plating without palladium activation, in order to explore the lightweight SiC-based wave-absorbing material that exhibits intense absorption and wide bandwidth. It is shown that when the (SiC)<sub>p</sub> is about 60 μm, the A2-Ni@SiC demonstrates the minimum reflection loss (RL<sub>min</sub>) of −50.27 dB at 8.04 GHz with an effective absorption bandwidth (EAB) of 5.64 GHz at 3.0 mm (from 7.24 to 12.88 GHz). When the particle size of (SiC)<sub>p</sub> is further refined to about 5 μm, the prepared B2-Ni@SiC shows exceptional wave-absorbing performance achieving the RL<sub>min</sub> of −66.10 dB at 3.4 mm, along with an EAB of 4.44 GHz (from 5.56 to 10.0 GHz). The enhancement in wave-absorbing is likely due to the increased interfacial polarization at the Ni-(SiC)<sub>p</sub> interface, as well as the improved matching of the hybridized constituents.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 5\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14448-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14448-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Ni@SiC composites from Ni-modified PCS-derived (SiC)p with high-efficiency microwave absorption properties
Silicon carbide (SiC) presents significant application prospects in the light of wave-absorbing, attributed to its excellent electrical and physicochemical properties. By utilizing the synergistic loss mechanism, SiC compounding with the magnetic can markedly enhance the absorption efficiency of electromagnetic wave (EMW) which is an important technical mean to optimize the wave-absorbing capabilities. In this paper, polycarbosilane (PCS) was used as a precursor to prepare (SiC)p and Ni@SiC composites were successfully synthesized by chemical plating without palladium activation, in order to explore the lightweight SiC-based wave-absorbing material that exhibits intense absorption and wide bandwidth. It is shown that when the (SiC)p is about 60 μm, the A2-Ni@SiC demonstrates the minimum reflection loss (RLmin) of −50.27 dB at 8.04 GHz with an effective absorption bandwidth (EAB) of 5.64 GHz at 3.0 mm (from 7.24 to 12.88 GHz). When the particle size of (SiC)p is further refined to about 5 μm, the prepared B2-Ni@SiC shows exceptional wave-absorbing performance achieving the RLmin of −66.10 dB at 3.4 mm, along with an EAB of 4.44 GHz (from 5.56 to 10.0 GHz). The enhancement in wave-absorbing is likely due to the increased interfacial polarization at the Ni-(SiC)p interface, as well as the improved matching of the hybridized constituents.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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