低烧结温度对(Bi0.4Ba0.1)Na0.5TiO3陶瓷结构、形态和介电性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-26 DOI:10.1007/s10854-025-14459-x
Ayushi Sharma, Manpreet Singh, Kamal Kishore, Dinesh Pathak, Khalid Mujasam Batoo, Taimun Qaisar, Ahmed Ahmed Ibrahim, Deepak Kumar, Kais Iben Nassar, Madan Lal
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引用次数: 0

摘要

本文采用常规固相反应法制备了(Bi0.4Ba0.1)Na0.5TiO3陶瓷,并分别在850℃、900℃和950℃低温下烧结3 h。在(Bi0.4Ba0.1)Na0.5TiO3陶瓷烧结过程中,采用Bi2O3和Na2O3抑制Bi和Na离子的挥发性。采用x射线衍射(XRD)、扫描电镜(SEM)和LCR仪对陶瓷的结构、形态和介电性能进行了分析。通过对XRD谱图的Rietveld细化,确定了具有R3c空间群的菱面体晶格。W-H图显示,由于平均晶粒尺寸从133.32 nm减小到119.52 nm,晶体应变从0.77 × 10-3增加到1.5 × 10-3。SEM图像显示,随着烧结温度的升高,晶粒尺寸从0.55 μm增加到2.30 μm。介电光谱显示,介电常数ε的大小随频率的增加而减小,这可以用麦克斯韦-瓦格纳模型来解释。铁电相变温度向更高的温度转移,使材料具有储能应用的可行性。
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Influence of low sintering temperature on the structural, morphological, and dielectric properties of (Bi0.4Ba0.1)Na0.5TiO3 ceramics

This paper presents the preparation of ceramics with (Bi0.4Ba0.1)Na0.5TiO3 via a conventional solid-state reaction method and their sintering at low temperatures of 850, 900, and 950 °C for 3 h, respectively. Bi2O3 and Na2O3 were used to suppress the volatility of Bi and Na ions during the sintering of (Bi0.4Ba0.1)Na0.5TiO3 ceramics. X-ray diffraction (XRD), Scanning electron microscope (SEM), and an LCR meter were used to analyze these ceramics' structural, morphological, and dielectric properties. Rhombohedral crystal lattice (with space group R3c) is confirmed by Rietveld’s refinement of the XRD pattern. W–H plots show an increase in crystallite strain from 0.77 × 10–3 to 1.5 × 10–3 due to a decrease in average crystallite size from 133.32 to 119.52 nm. With an increase in sintering temperature, the grain size increased from 0.55 to 2.30 μm on average based on SEM images. Dielectric spectra revealed that the magnitude of the dielectric constant (ε) decreases with frequency increase and is explained by Maxwell–Wagner’s Model. The ferroelectric phase transition temperature is shifted to a higher temperature, which makes the material feasible for energy storage applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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