Hye Rim Kim, Tae Jun Seok, Tae Jung Ha, Jeong Hwan Song, Kyun Seong Dae, Sang Gil Lee, Hyun Seung Choi, Su Yong Park, Byung Joon Choi, Jae Hyuck Jang, Soo Gil Kim, Tae Joo Park
{"title":"Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model","authors":"Hye Rim Kim, Tae Jun Seok, Tae Jung Ha, Jeong Hwan Song, Kyun Seong Dae, Sang Gil Lee, Hyun Seung Choi, Su Yong Park, Byung Joon Choi, Jae Hyuck Jang, Soo Gil Kim, Tae Joo Park","doi":"10.1186/s40580-025-00480-7","DOIUrl":null,"url":null,"abstract":"<div><p>Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO<sub>2</sub> selector unit. The structural and electrical characteristics of an As-embedded SiO<sub>2</sub> selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO<sub>2</sub> matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO<sub>2</sub>. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00480-7","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Convergence","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1186/s40580-025-00480-7","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model
Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO2 selector unit. The structural and electrical characteristics of an As-embedded SiO2 selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO2 matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO2. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.
期刊介绍：
Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects.
Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.
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