{"title":"高耐久体积CMOS单晶体管低温存储器","authors":"A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter","doi":"10.1016/j.sse.2025.109097","DOIUrl":null,"url":null,"abstract":"<div><div>Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈10<sup>7</sup> <em>I</em><sub>1</sub>/<em>I</em><sub>0</sub> memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at <em>T</em> = 7 K. We observe excellent endurance, with no visible degradation over 10<sup>9</sup> write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X <em>I</em><sub>1</sub>/<em>I</em><sub>0</sub> memory window and would be even higher in a device with no substrate contact.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109097"},"PeriodicalIF":1.4000,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-endurance bulk CMOS one-transistor cryo-memory\",\"authors\":\"A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter\",\"doi\":\"10.1016/j.sse.2025.109097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈10<sup>7</sup> <em>I</em><sub>1</sub>/<em>I</em><sub>0</sub> memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at <em>T</em> = 7 K. We observe excellent endurance, with no visible degradation over 10<sup>9</sup> write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X <em>I</em><sub>1</sub>/<em>I</em><sub>0</sub> memory window and would be even higher in a device with no substrate contact.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"226 \",\"pages\":\"Article 109097\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125000425\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/2/28 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000425","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/2/28 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈107I1/I0 memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at T = 7 K. We observe excellent endurance, with no visible degradation over 109 write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X I1/I0 memory window and would be even higher in a device with no substrate contact.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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