电气应用中分散在聚乙烯醇中的五氧化二铌和五氧化二钒的介电和电增强

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-28 DOI:10.1007/s10854-025-14576-7
Amani Saleh Almuslem
{"title":"电气应用中分散在聚乙烯醇中的五氧化二铌和五氧化二钒的介电和电增强","authors":"Amani Saleh Almuslem","doi":"10.1007/s10854-025-14576-7","DOIUrl":null,"url":null,"abstract":"<div><p>The investigation focuses on polymeric nanocomposites based on PVA doped with niobium oxide (Nb<sub>2</sub>O<sub>5</sub>) and vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>). The structure of the fabricated nanocomposites was examined via various methods. Morphological analysis revealed that the average particle size of Nb<sub>2</sub>O<sub>5</sub> in PVA-Nb<sub>2</sub>O<sub>5</sub> is approximately 110 nm, while in PVA-Nb<sub>2</sub>O<sub>5</sub>-3%V<sub>2</sub>O<sub>5</sub>, Nb<sub>2</sub>O<sub>5</sub> reaches 103 nm, and V<sub>2</sub>O<sub>5</sub> particles are dispersed with an average size of 35 nm. Thermal analysis via TGA demonstrated enhanced stability, with the total weight loss decreasing upon filler insertion. The residual mass increased due to the presence of inorganic oxides, with a final residue of 4.9% for pure PVA and increasing with Nb<sub>2</sub>O<sub>5</sub> and V<sub>2</sub>O<sub>5</sub> doping. Furthermore, optical studies showed an x-axis shifting absorption edge for PVA, which starts at 3.8 eV and lowers to 2.5 eV for PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite. The indirect band gap decreases for all nanocomposites, reaching 2.85 eV in PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite, compared to 5.5 eV in PVA. In contrast, the refractive index registers 1.687 in PVA and increases to 2.075 in PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite. Moreover, dielectric measurements revealed that the dielectric constant rose to 43 in PVA-Nb<sub>2</sub>O<sub>5</sub> nanocomposite but fell from approximately 30 for PVA to less than 20 following doping with V<sub>2</sub>O<sub>5</sub>. The high relative permittivity of Nb2O5 (100) and V<sub>2</sub>O<sub>5</sub> (25) suggests their suitability for advanced dielectric applications. AC resistivity measurements showed an increasing trend with frequency, reaching their highest value at PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub>. The optical and dielectric analysis of PVA-Nb<sub>2</sub>O<sub>5</sub>-V<sub>2</sub>O<sub>5</sub> nanocomposites obtained unique behavior in line with earlier studies. Thus, the examined nanocomposites present a potentially useful nano-composite for optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric and electrical enhancement of niobium pentoxide and vanadium pentoxide scattered in Poly-vinyl alcohol for electrical applications\",\"authors\":\"Amani Saleh Almuslem\",\"doi\":\"10.1007/s10854-025-14576-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The investigation focuses on polymeric nanocomposites based on PVA doped with niobium oxide (Nb<sub>2</sub>O<sub>5</sub>) and vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>). The structure of the fabricated nanocomposites was examined via various methods. Morphological analysis revealed that the average particle size of Nb<sub>2</sub>O<sub>5</sub> in PVA-Nb<sub>2</sub>O<sub>5</sub> is approximately 110 nm, while in PVA-Nb<sub>2</sub>O<sub>5</sub>-3%V<sub>2</sub>O<sub>5</sub>, Nb<sub>2</sub>O<sub>5</sub> reaches 103 nm, and V<sub>2</sub>O<sub>5</sub> particles are dispersed with an average size of 35 nm. Thermal analysis via TGA demonstrated enhanced stability, with the total weight loss decreasing upon filler insertion. The residual mass increased due to the presence of inorganic oxides, with a final residue of 4.9% for pure PVA and increasing with Nb<sub>2</sub>O<sub>5</sub> and V<sub>2</sub>O<sub>5</sub> doping. Furthermore, optical studies showed an x-axis shifting absorption edge for PVA, which starts at 3.8 eV and lowers to 2.5 eV for PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite. The indirect band gap decreases for all nanocomposites, reaching 2.85 eV in PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite, compared to 5.5 eV in PVA. In contrast, the refractive index registers 1.687 in PVA and increases to 2.075 in PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub> nanocomposite. Moreover, dielectric measurements revealed that the dielectric constant rose to 43 in PVA-Nb<sub>2</sub>O<sub>5</sub> nanocomposite but fell from approximately 30 for PVA to less than 20 following doping with V<sub>2</sub>O<sub>5</sub>. The high relative permittivity of Nb2O5 (100) and V<sub>2</sub>O<sub>5</sub> (25) suggests their suitability for advanced dielectric applications. AC resistivity measurements showed an increasing trend with frequency, reaching their highest value at PVA-Nb<sub>2</sub>O<sub>5</sub>-7%V<sub>2</sub>O<sub>5</sub>. The optical and dielectric analysis of PVA-Nb<sub>2</sub>O<sub>5</sub>-V<sub>2</sub>O<sub>5</sub> nanocomposites obtained unique behavior in line with earlier studies. Thus, the examined nanocomposites present a potentially useful nano-composite for optoelectronic applications.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 9\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14576-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14576-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

研究了掺有氧化铌(Nb2O5)和五氧化钒(V2O5)的聚乙烯醇(PVA)聚合物纳米复合材料。通过各种方法对制备的纳米复合材料的结构进行了检测。形态分析表明,PVA-Nb2O5中Nb2O5的平均粒径约为110 nm,而PVA-Nb2O5-3%V2O5中Nb2O5的平均粒径为103 nm, V2O5颗粒分散,平均粒径为35 nm。热分析通过TGA证明了增强的稳定性,总重量损失减少填料的插入。由于无机氧化物的存在,残余质量增加,纯PVA的最终残余质量为4.9%,Nb2O5和V2O5的掺杂使残余质量增加。此外,光学研究表明,PVA的x轴偏移吸收边缘从3.8 eV开始,而PVA- nb2o5 -7% v2o5纳米复合材料的x轴偏移吸收边缘降至2.5 eV。复合材料的间接带隙减小,PVA- nb2o5 -7% v2o5纳米复合材料的间接带隙达到2.85 eV,而PVA为5.5 eV。而PVA的折射率为1.687,PVA- nb2o5 -7% v2o5纳米复合材料的折射率为2.075。此外,电介质测量表明,PVA- nb2o5纳米复合材料的介电常数上升到43,而PVA的介电常数约为30,掺杂V2O5后介电常数降至20以下。Nb2O5(100)和V2O5(25)的高相对介电常数表明它们适合高级介电介质应用。交流电阻率随频率增加呈增加趋势,在PVA-Nb2O5-7%V2O5时达到最高值。PVA-Nb2O5-V2O5纳米复合材料的光学和电介质分析得到了与早期研究一致的独特行为。因此,所研究的纳米复合材料为光电应用提供了潜在的有用纳米复合材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Dielectric and electrical enhancement of niobium pentoxide and vanadium pentoxide scattered in Poly-vinyl alcohol for electrical applications

The investigation focuses on polymeric nanocomposites based on PVA doped with niobium oxide (Nb2O5) and vanadium pentoxide (V2O5). The structure of the fabricated nanocomposites was examined via various methods. Morphological analysis revealed that the average particle size of Nb2O5 in PVA-Nb2O5 is approximately 110 nm, while in PVA-Nb2O5-3%V2O5, Nb2O5 reaches 103 nm, and V2O5 particles are dispersed with an average size of 35 nm. Thermal analysis via TGA demonstrated enhanced stability, with the total weight loss decreasing upon filler insertion. The residual mass increased due to the presence of inorganic oxides, with a final residue of 4.9% for pure PVA and increasing with Nb2O5 and V2O5 doping. Furthermore, optical studies showed an x-axis shifting absorption edge for PVA, which starts at 3.8 eV and lowers to 2.5 eV for PVA-Nb2O5-7%V2O5 nanocomposite. The indirect band gap decreases for all nanocomposites, reaching 2.85 eV in PVA-Nb2O5-7%V2O5 nanocomposite, compared to 5.5 eV in PVA. In contrast, the refractive index registers 1.687 in PVA and increases to 2.075 in PVA-Nb2O5-7%V2O5 nanocomposite. Moreover, dielectric measurements revealed that the dielectric constant rose to 43 in PVA-Nb2O5 nanocomposite but fell from approximately 30 for PVA to less than 20 following doping with V2O5. The high relative permittivity of Nb2O5 (100) and V2O5 (25) suggests their suitability for advanced dielectric applications. AC resistivity measurements showed an increasing trend with frequency, reaching their highest value at PVA-Nb2O5-7%V2O5. The optical and dielectric analysis of PVA-Nb2O5-V2O5 nanocomposites obtained unique behavior in line with earlier studies. Thus, the examined nanocomposites present a potentially useful nano-composite for optoelectronic applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
An improved unified creep‐plasticity constitutive model for viscoplastic solder materials of electronic packaging subjected to high-strain-rate impact loadings Effects of TiO2 nanoparticles on mechanical and corrosion properties of Cu/SAC305–xTiO2/Cu solder joints: experiments and theoretical calculations Temperature dependencies of dielectric relaxation dynamics in PVDF nanocomposites filled with 2d nanofillers: a comparative study of MoS2 and h-BN filled PVDF Infrared-responsive spherical molybdenum oxide/Cl–Poly(N-methylpyrrole) photocathode for sustainable hydrogen generation from seawater Physical investigation of Au/Si/CuSbS₂/Au heterojunctions grown at various substrate temperatures using oblique angle incidence deposition
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1