{"title":"基于Mg2Si异质结构的SOI TFET具有陡峭的亚阈值摆幅和高电流驱动性","authors":"Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma","doi":"10.1007/s10825-023-02051-7","DOIUrl":null,"url":null,"abstract":"<div><p>We present the results of a simulation study of Mg<sub>2</sub>Si heterojunction-based SOI TFETs using TCAD. Mg<sub>2</sub>Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (<i>I</i><sub>ON</sub>), off-current (<i>I</i><sub>OFF</sub>), and subthreshold swing were found to be 1.089 × 10<sup>−5</sup>A/μm, 8.632 × 10<sup>−17</sup>A/μm, 1.26 × 10<sup>11</sup>, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"990 - 998"},"PeriodicalIF":2.2000,"publicationDate":"2023-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02051-7.pdf","citationCount":"0","resultStr":"{\"title\":\"Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability\",\"authors\":\"Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma\",\"doi\":\"10.1007/s10825-023-02051-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We present the results of a simulation study of Mg<sub>2</sub>Si heterojunction-based SOI TFETs using TCAD. Mg<sub>2</sub>Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (<i>I</i><sub>ON</sub>), off-current (<i>I</i><sub>OFF</sub>), and subthreshold swing were found to be 1.089 × 10<sup>−5</sup>A/μm, 8.632 × 10<sup>−17</sup>A/μm, 1.26 × 10<sup>11</sup>, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"22 4\",\"pages\":\"990 - 998\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10825-023-02051-7.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-023-02051-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02051-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability
We present the results of a simulation study of Mg2Si heterojunction-based SOI TFETs using TCAD. Mg2Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (ION), off-current (IOFF), and subthreshold swing were found to be 1.089 × 10−5A/μm, 8.632 × 10−17A/μm, 1.26 × 1011, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
