{"title":"TFET结构电噪声分析综述","authors":"Sweta Chander, Sanjeet Kumar Sinha, Rekha Chaudhary","doi":"10.1016/j.spmi.2021.107101","DOIUrl":null,"url":null,"abstract":"<div><p>Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET structures different noise sources affect the performance at different frequency ranges. This paper presents a comprehensive review of impact of electrical noise on the performance of various TFET structures. The impact of both low-frequency noise sources and high-frequency sources have been discussed thoroughly. The study of different types of electrical noises occur in simple TFET device and different structures of TFET is presented.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Comprehensive review on electrical noise analysis of TFET structures\",\"authors\":\"Sweta Chander, Sanjeet Kumar Sinha, Rekha Chaudhary\",\"doi\":\"10.1016/j.spmi.2021.107101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET structures different noise sources affect the performance at different frequency ranges. This paper presents a comprehensive review of impact of electrical noise on the performance of various TFET structures. The impact of both low-frequency noise sources and high-frequency sources have been discussed thoroughly. The study of different types of electrical noises occur in simple TFET device and different structures of TFET is presented.</p></div>\",\"PeriodicalId\":22044,\"journal\":{\"name\":\"Superlattices and Microstructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superlattices and Microstructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0749603621003025\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621003025","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Comprehensive review on electrical noise analysis of TFET structures
Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET structures different noise sources affect the performance at different frequency ranges. This paper presents a comprehensive review of impact of electrical noise on the performance of various TFET structures. The impact of both low-frequency noise sources and high-frequency sources have been discussed thoroughly. The study of different types of electrical noises occur in simple TFET device and different structures of TFET is presented.
期刊介绍：
Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover:
• Novel micro and nanostructures
• Nanomaterials (nanowires, nanodots, 2D materials ) and devices
• Synthetic heterostructures
• Plasmonics
• Micro and nano-defects in materials (semiconductor, metal and insulators)
• Surfaces and interfaces of thin films
In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board.
Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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