用刷新水热法制备前驱体摩尔浓度变化的ZnO纳米结构制备振动传感器

IF 0.8 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Circuit World Pub Date : 2021-09-09 DOI:10.1108/cw-08-2020-0183
Iyappan Gunasekaran, Govindaraj Rajamanickam, Santhosh Narendiran, R. Perumalsamy, Kiruthika Ramany, R. Sankararajan
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引用次数: 0

摘要

目的采用多种方法改变氧化锌薄膜的振动传感性能,以获得高灵敏度。本文报道了用刷新水热法在刚性衬底上制备前驱体摩尔比浓度变化的ZnO纳米结构的实验研究。利用振动传感装置实验研究了这些制备的ZnO纳米结构振动传感器的效果。采用低温辅助刷新水热法制备zno纳米结构,前驱体摩尔浓度分别为0.025 M (R1)、0.075 M (R2)和0.125 M (R3)。将p型材料聚3,4-乙烯二氧噻吩-聚苯乙烯磺酸盐包覆在生长的ZnO纳米结构上。结构分析表明,相对而言,R2和R3样品的(002)面强度增加,c轴取向更好。形态学检查表明,随着前驱体摩尔浓度的增加,生长的纳米结构发生了变化。随着前驱体摩尔浓度的增加,光学带隙值从3.11 eV减小到3.08 eV。光电导率研究证实了所有制备的器件都能形成具有较低导通电压的pn结。与其他两种制备样品相比,Nyquist R2分析获得的内阻较小,为0.37 kΩ。振动测试实验表明,R2样品在9 Hz谐振频率下输出电压为2.61 V,加速度为1 g时输出电压为2.90 V。这也增加了4.68 V/g的灵敏度,与其他制备的两个样品相比,证实了其更好的性能。光电导率研究证实了所有制造的器件都能形成具有较低导通电压的pn结。根据奈奎斯特图计算出较小的内阻0.37 kΩ。振动测试实验证明其灵敏度提高了4.68 V/g,证实了其性能优于其他制备的两种样品。独创性/价值振动测试实验证明,R2的灵敏度提高了4.68 V/g,与其他制备的两个样品相比,证实了其更好的性能。
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Fabrication of vibration sensors using precursor molar concentration varied ZnO nanostructures grown by refresh hydrothermal method
Purpose Various approaches have been made to alter the vibration sensing properties of zinc oxide (ZnO) films to achieve high sensitivity. This paper aims to report the experimental study of the fabrication of precursor molar ratio concentration varied ZnO nanostructures grown on rigid substrates using the refresh hydrothermal method. The effect of these fabricated ZnO nanostructures-based vibration sensors was experimentally investigated using a vibration sensing setup. Design/methodology/approach ZnO nanostructures have been grown using low temperature assisted refresh hydrothermal method with different precursor molar concentrations 0.025 M (R1), 0.075 M (R2) and 0.125 M (R3). Poly 3,4-ethylenedioxythiophene polystyrene sulfonate, a p-type material is spun coated on the grown ZnO nanostructures. Structural analysis reveals the increased intensity of the (002) plane and better c-axis orientation of the R2 and R3 sample comparatively. Morphological examination shows the changes in the grown nanostructures upon increasing the precursor molar concentration. The optical band gap value decreases from 3.11 eV to 3.08 eV as the precursor molar concentration is increased. Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was obtained from Nyquist analysis for R2 compared with the other two fabricated samples. Vibration testing experimentation showed an improved output voltage of the R2 sample (2.61 V at 9 Hz resonant frequency and 2.90 V for 1 g acceleration) comparatively. This also gave an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Findings Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was calculated from the Nyquist plot. Vibration testing experimentation proves an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Originality/value Vibration testing experimentation proves an increased sensitivity of 4.68 V/g for R2 confirming its better performance when compared to the other fabricated two samples.
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来源期刊
Circuit World
Circuit World 工程技术-材料科学:综合
CiteScore
2.60
自引率
0.00%
发文量
33
审稿时长
>12 weeks
期刊介绍: Circuit World is a platform for state of the art, technical papers and editorials in the areas of electronics circuit, component, assembly, and product design, manufacture, test, and use, including quality, reliability and safety. The journal comprises the multidisciplinary study of the various theories, methodologies, technologies, processes and applications relating to todays and future electronics. Circuit World provides a comprehensive and authoritative information source for research, application and current awareness purposes. Circuit World covers a broad range of topics, including: • Circuit theory, design methodology, analysis and simulation • Digital, analog, microwave and optoelectronic integrated circuits • Semiconductors, passives, connectors and sensors • Electronic packaging of components, assemblies and products • PCB design technologies and processes (controlled impedance, high-speed PCBs, laminates and lamination, laser processes and drilling, moulded interconnect devices, multilayer boards, optical PCBs, single- and double-sided boards, soldering and solderable finishes) • Design for X (including manufacturability, quality, reliability, maintainability, sustainment, safety, reuse, disposal) • Internet of Things (IoT).
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