Surface defects in 4H-SiC homoepitaxial layers

Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research. In this study, several kinds of surface defects in the 4H-SiC homoepitaxial layer are systemically investigated, including triangles, carrots, surface pits, basal plane dislocations, and step bunching. The morphologies and structures of surface defects are further discussed via optical microscopy and potassium hydroxide-based defect selective etching analysis. Through research and analysis, we found that the origin of surface defects in the 4H-SiC homoepitaxial layer can be attributed to two aspects: the propagation of substrate defects, such as scratches, dislocation, and inclusion, and improper process parameters during epitaxial growth, such as in-situ etch, C/Si ratio, and growth temperature. It is believed that the surface defects in the 4H-SiC homoepitaxial layer can be significantly decreased by precisely controlling the chemistry on the deposition surface during the growth process.