{"title":"MgxZn1−xO/ZnO异质结构的速度场特性","authors":"DongFeng Liu","doi":"10.1007/s10825-022-01999-2","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, electron transport in Mg<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>O/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms including acoustic deformation potential, piezoelectric acoustic phonon, polar optical phonon (POP), interface roughness (IFR), dislocation, electron escape (ESC) and capture (CPR) by optical phonons, and random alloy are considered in EMC. The electron drift velocity in Mg<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>O/ZnO heterostructures is calculated for various Mg mole fractions <i>x</i> (0.1–0.3) at electric fields up to 25 kV/cm. We find that no obvious velocity saturation occurs in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms limiting the drift velocity. On the other hand, the competition between IFR and intersubband POP scattering is found to play an important role in the change in electron drift velocity with the increasing Mg mole fractions.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"603 - 611"},"PeriodicalIF":2.2000,"publicationDate":"2023-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-022-01999-2.pdf","citationCount":"1","resultStr":"{\"title\":\"Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures\",\"authors\":\"DongFeng Liu\",\"doi\":\"10.1007/s10825-022-01999-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, electron transport in Mg<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>O/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms including acoustic deformation potential, piezoelectric acoustic phonon, polar optical phonon (POP), interface roughness (IFR), dislocation, electron escape (ESC) and capture (CPR) by optical phonons, and random alloy are considered in EMC. The electron drift velocity in Mg<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>O/ZnO heterostructures is calculated for various Mg mole fractions <i>x</i> (0.1–0.3) at electric fields up to 25 kV/cm. We find that no obvious velocity saturation occurs in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms limiting the drift velocity. On the other hand, the competition between IFR and intersubband POP scattering is found to play an important role in the change in electron drift velocity with the increasing Mg mole fractions.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"22 2\",\"pages\":\"603 - 611\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-01-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10825-022-01999-2.pdf\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-022-01999-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-022-01999-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures
In this work, electron transport in MgxZn1−xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms including acoustic deformation potential, piezoelectric acoustic phonon, polar optical phonon (POP), interface roughness (IFR), dislocation, electron escape (ESC) and capture (CPR) by optical phonons, and random alloy are considered in EMC. The electron drift velocity in MgxZn1−xO/ZnO heterostructures is calculated for various Mg mole fractions x (0.1–0.3) at electric fields up to 25 kV/cm. We find that no obvious velocity saturation occurs in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms limiting the drift velocity. On the other hand, the competition between IFR and intersubband POP scattering is found to play an important role in the change in electron drift velocity with the increasing Mg mole fractions.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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