直流离子等离子溅射制备Ge2Sb2Te5薄膜的结构和电子性能

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-07-01 DOI:10.15251/cl.2023.207.487

S. Sultanbekov, O. Prikhodko, N. Almas

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引用次数: 0

摘要

研究了Ge2Sb2Te5薄膜的光学性质随厚度的变化规律。光学带隙随薄膜厚度的减小而增大。研究了Ge2Sb2Te5薄膜在电流模式下的电流电压特性。开关时间和阈值电压随薄膜厚度的减小而减小。

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Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering

The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.