{"title":"一维缺陷光子晶体微腔中二氧化钒相变的反射-吸收太赫兹可切换双功能","authors":"Arezou Rashidi","doi":"10.1007/s10825-023-02010-2","DOIUrl":null,"url":null,"abstract":"<div><p>The terahertz (THz) absorption features are theoretically investigated in a symmetric one-dimensional photonic crystal hybridized with a vanadium dioxide (VO<sub>2</sub>) phase change material (PCM). VO<sub>2</sub> is one of the most prominent PCMs whose conductivity increases three orders of magnitude during its phase transition from a semiconducting monoclinic to a metallic tetragonal structure. Here, we utilize this property of VO<sub>2</sub> to engineer a tunable THz optical device. Our results show that when the VO<sub>2</sub> is in the semiconductor state with low conductivity of 200 S/m, the structure is nearly reflective. However, increasing the VO<sub>2</sub> conductivity continuously to the value of 1.5 × 10<sup>5</sup> S/m increases its metallic level further leading to the perfect absorption of the structure. Further increasing the VO<sub>2</sub> conductivity to the value of 2 × 10<sup>5</sup> S/m reconfigures it to the fully metallic state so that the absorption peak value remains unit as well. In other words, there is a unit contrast in the absorption levels between two semiconductor and metallic states of VO<sub>2</sub> for the proposed structure, which makes it promising for designing tunable nearly reflective and absorbent bifunctionality and optical switching THz devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"698 - 703"},"PeriodicalIF":2.2000,"publicationDate":"2023-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reflective-to-absorptive THz switchable bifunctionality through phase transition of vanadium dioxide in a 1D defective photonic crystal microcavity\",\"authors\":\"Arezou Rashidi\",\"doi\":\"10.1007/s10825-023-02010-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The terahertz (THz) absorption features are theoretically investigated in a symmetric one-dimensional photonic crystal hybridized with a vanadium dioxide (VO<sub>2</sub>) phase change material (PCM). VO<sub>2</sub> is one of the most prominent PCMs whose conductivity increases three orders of magnitude during its phase transition from a semiconducting monoclinic to a metallic tetragonal structure. Here, we utilize this property of VO<sub>2</sub> to engineer a tunable THz optical device. Our results show that when the VO<sub>2</sub> is in the semiconductor state with low conductivity of 200 S/m, the structure is nearly reflective. However, increasing the VO<sub>2</sub> conductivity continuously to the value of 1.5 × 10<sup>5</sup> S/m increases its metallic level further leading to the perfect absorption of the structure. Further increasing the VO<sub>2</sub> conductivity to the value of 2 × 10<sup>5</sup> S/m reconfigures it to the fully metallic state so that the absorption peak value remains unit as well. In other words, there is a unit contrast in the absorption levels between two semiconductor and metallic states of VO<sub>2</sub> for the proposed structure, which makes it promising for designing tunable nearly reflective and absorbent bifunctionality and optical switching THz devices.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"22 2\",\"pages\":\"698 - 703\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-01-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-023-02010-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02010-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Reflective-to-absorptive THz switchable bifunctionality through phase transition of vanadium dioxide in a 1D defective photonic crystal microcavity
The terahertz (THz) absorption features are theoretically investigated in a symmetric one-dimensional photonic crystal hybridized with a vanadium dioxide (VO2) phase change material (PCM). VO2 is one of the most prominent PCMs whose conductivity increases three orders of magnitude during its phase transition from a semiconducting monoclinic to a metallic tetragonal structure. Here, we utilize this property of VO2 to engineer a tunable THz optical device. Our results show that when the VO2 is in the semiconductor state with low conductivity of 200 S/m, the structure is nearly reflective. However, increasing the VO2 conductivity continuously to the value of 1.5 × 105 S/m increases its metallic level further leading to the perfect absorption of the structure. Further increasing the VO2 conductivity to the value of 2 × 105 S/m reconfigures it to the fully metallic state so that the absorption peak value remains unit as well. In other words, there is a unit contrast in the absorption levels between two semiconductor and metallic states of VO2 for the proposed structure, which makes it promising for designing tunable nearly reflective and absorbent bifunctionality and optical switching THz devices.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.