基于dram - nvm的混合存储系统在设计、数据放置、迁移和功耗性能权衡方面的挑战

IF 2.5 4区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IETE Technical Review Pub Date : 2022-10-13 DOI:10.1080/02564602.2022.2127945

Sadhana Rai, B. Talawar

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引用次数: 0

摘要

基于DRAM-NVM的混合内存通过在高性能DRAM和可靠的NVM之间进行页面迁移，开辟了各种功率-性能区域操作配置。两种技术的合并需要对现有的基于单片dram的系统进行各种修改。本文综述了混合存储器中数据放置和页面迁移的研究现状。介绍了NVMs-PCM、STT-RAM和ReRAM的挑战和设计解决方案。本文还指出了这些领域的几个研究挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Challenges in Design, Data Placement, Migration and Power-Performance Trade-offs in DRAM-NVM-based Hybrid Memory Systems

DRAM-NVM-based hybrid memory opens up a varied range of power-performance-area operational configurations through page migration between the high-performance DRAM and the reliable NVM. The amalgamation of two technologies requires various modifications for the existing monolithic DRAM-based systems. This paper summarizes the current research work in the areas of data placement and page migration in hybrid memories. The challenges and design solutions from a range of NVMs-PCM, STT-RAM, ReRAM is presented. This paper also identifies several research challenges in these areas.

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来源期刊

IETE Technical Review 工程技术-电信学

CiteScore

5.70

自引率

4.20%

发文量

审稿时长

9 months

期刊介绍： IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.