TC4合金上原位制备的WS2/TiO2复合层摩擦性能的改善

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2022-12-21 DOI:10.15251/cl.2022.1912.955

G. Gu, J. Shang, X. Zhang

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引用次数: 0

摘要

采用等离子体电解氧化法，在电解液中加入Na2S和Na2WO4，成功地原位制备了WS2/TiO2复合层。通过X射线衍射、扫描电子显微镜和三维共聚焦显微镜研究了复合层的结构、形貌和摩擦性能。研究发现，当添加浓度为10–20 g/L时，WS2/TiO2复合层密度更大，摩擦系数更低。等离子体电解氧化原位制备WS2/TiO2复合层是提高TC4合金摩擦学性能的一种新方法。

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Improved frictional properties of WS2/TiO2 composite layer in situ prepared on TC4 alloy

WS2/TiO2 composite layer was successfully in situ prepared by plasma electrolytic oxidation method adding Na2S and Na2WO4 into electrolyte. The structure, morphology and frictional properties of the composite layer were investigated by X-ray diffraction, scanning electron microscopy, and 3D confocal microscopy. It was found that the WS2/TiO2 composite layer is denser and has a lower friction coefficient when the adding concentration is 10–20 g/L. The WS2/TiO2 composite layer in situ prepared by plasma electrolytic oxidation is a new method to improve the trilogical hehavior of TC4 alloy.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.