用APCVD法研究衬底相对源位置对纯纳米氧化锡光电性能和结构性能的影响

Masoudeh Maleki, Seyed Mohammad Rozati
{"title":"用APCVD法研究衬底相对源位置对纯纳米氧化锡光电性能和结构性能的影响","authors":"Masoudeh Maleki,&nbsp;Seyed Mohammad Rozati","doi":"10.1002/cvde.201407103","DOIUrl":null,"url":null,"abstract":"<div>\n \n <section>\n \n <p>Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 Ω/□. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 10-11-12","pages":"352-355"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407103","citationCount":"3","resultStr":"{\"title\":\"Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD†\",\"authors\":\"Masoudeh Maleki,&nbsp;Seyed Mohammad Rozati\",\"doi\":\"10.1002/cvde.201407103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <section>\\n \\n <p>Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 Ω/□. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"20 10-11-12\",\"pages\":\"352-355\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201407103\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

采用简单而廉价的常压CVD方法,将纯氧化锡(TO)薄膜以相对于源位置的不同衬底角度沉积在玻璃衬底上。沉积温度恒定在500℃左右,以流量为100 sccm的氧气作为载气和氧化剂。对薄片电阻的研究表明,电阻率在106和。241Ω/□。x射线衍射(XRD)也表明,在不同的衬底角度沉积的所有薄膜都是多晶结构,优选取向为(110)。扫描电子显微镜(SEM)图像也显示了所有薄膜表面均匀的冲击结构。光学性质显示出明显的变化,作为基板位置相对于源的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD†

Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 Ω/□. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
自引率
0.00%
发文量
0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
期刊最新文献
Low Temperature PureB Technology for CMOS Compatible Photodetectors From V. B. Aleskovskii's “Framework” Hypothesis to the Method of Molecular Layering/Atomic Layer Deposition† Farewell and Welcome Chem. Vap. Deposition (10–11–12/2015) Numerical Modeling of the Droplet Vaporization for Design and Operation of Liquid-pulsed CVD
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1