Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen
{"title":"LaPO4和Ca:LaPO4的原子层沉积**","authors":"Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen","doi":"10.1002/cvde.201407112","DOIUrl":null,"url":null,"abstract":"<div>\n \n <section>\n \n <p>Thin films of lanthanum phosphate (LaPO<sub>4</sub>) are produced by atomic layer deposition (ALD) for the first time, using a precursor combination of (CH<sub>3</sub>)<sub>3</sub>PO<sub>4</sub>, La(thd)<sub>3</sub> (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), H<sub>2</sub>O, and O<sub>3</sub>. The deposition process is studied via an in-situ quartz crystal microbalance (QCM) and found to be a two-step process in which both water and ozone contribute to the growth. The best results are obtained when both water and ozone are pulsed simultaneously. The growth is self-limiting by nature, and a stoichiometric LaPO<sub>4</sub> phase can be obtained for a 1:1 pulsed ratio of the two precursors. The resulting LaPO<sub>4</sub> films are amorphous as deposited, and crystallize to the monoclinic structure after annealing in air for 10 h at 1350 °C. The LaPO<sub>4</sub> thin films can also be doped by calcium during growth by replacing some of the La(thd)<sub>3</sub> pulses by Ca(thd)<sub>2</sub>. Films where 4.4% of the lanthanum in LaPO<sub>4</sub> is replaced by calcium are obtained.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"269-273"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407112","citationCount":"9","resultStr":"{\"title\":\"Atomic Layer Deposition of LaPO4 and Ca:LaPO4**\",\"authors\":\"Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen\",\"doi\":\"10.1002/cvde.201407112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <section>\\n \\n <p>Thin films of lanthanum phosphate (LaPO<sub>4</sub>) are produced by atomic layer deposition (ALD) for the first time, using a precursor combination of (CH<sub>3</sub>)<sub>3</sub>PO<sub>4</sub>, La(thd)<sub>3</sub> (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), H<sub>2</sub>O, and O<sub>3</sub>. The deposition process is studied via an in-situ quartz crystal microbalance (QCM) and found to be a two-step process in which both water and ozone contribute to the growth. The best results are obtained when both water and ozone are pulsed simultaneously. The growth is self-limiting by nature, and a stoichiometric LaPO<sub>4</sub> phase can be obtained for a 1:1 pulsed ratio of the two precursors. The resulting LaPO<sub>4</sub> films are amorphous as deposited, and crystallize to the monoclinic structure after annealing in air for 10 h at 1350 °C. The LaPO<sub>4</sub> thin films can also be doped by calcium during growth by replacing some of the La(thd)<sub>3</sub> pulses by Ca(thd)<sub>2</sub>. Films where 4.4% of the lanthanum in LaPO<sub>4</sub> is replaced by calcium are obtained.</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"20 7-8-9\",\"pages\":\"269-273\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201407112\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thin films of lanthanum phosphate (LaPO4) are produced by atomic layer deposition (ALD) for the first time, using a precursor combination of (CH3)3PO4, La(thd)3 (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), H2O, and O3. The deposition process is studied via an in-situ quartz crystal microbalance (QCM) and found to be a two-step process in which both water and ozone contribute to the growth. The best results are obtained when both water and ozone are pulsed simultaneously. The growth is self-limiting by nature, and a stoichiometric LaPO4 phase can be obtained for a 1:1 pulsed ratio of the two precursors. The resulting LaPO4 films are amorphous as deposited, and crystallize to the monoclinic structure after annealing in air for 10 h at 1350 °C. The LaPO4 thin films can also be doped by calcium during growth by replacing some of the La(thd)3 pulses by Ca(thd)2. Films where 4.4% of the lanthanum in LaPO4 is replaced by calcium are obtained.
期刊介绍：
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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