{"title":"直接液相注射CVD法制备二甲基异丙醇铝(DMAI)†氧化铝和碳化氧薄膜的工艺结构研究","authors":"Loïc Baggetto, Cédric Charvillat, Jérôme Esvan, Yannick Thébault, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Constantin Vahlas","doi":"10.1002/cvde.201507190","DOIUrl":null,"url":null,"abstract":"<div>\n \n \n <section>\n \n <p>We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O<sub>2</sub> gas, and at low temperature (150–300 °C) with the addition of H<sub>2</sub>O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"343-351"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507190","citationCount":"7","resultStr":"{\"title\":\"A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)†\",\"authors\":\"Loïc Baggetto, Cédric Charvillat, Jérôme Esvan, Yannick Thébault, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Constantin Vahlas\",\"doi\":\"10.1002/cvde.201507190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n \\n <section>\\n \\n <p>We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O<sub>2</sub> gas, and at low temperature (150–300 °C) with the addition of H<sub>2</sub>O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"21 10-11-12\",\"pages\":\"343-351\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201507190\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)†
We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O2 gas, and at low temperature (150–300 °C) with the addition of H2O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).
期刊介绍:
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.