直接液相注射CVD法制备二甲基异丙醇铝(DMAI)†氧化铝和碳化氧薄膜的工艺结构研究

Loïc Baggetto, Cédric Charvillat, Jérôme Esvan, Yannick Thébault, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Constantin Vahlas
{"title":"直接液相注射CVD法制备二甲基异丙醇铝(DMAI)†氧化铝和碳化氧薄膜的工艺结构研究","authors":"Loïc Baggetto,&nbsp;Cédric Charvillat,&nbsp;Jérôme Esvan,&nbsp;Yannick Thébault,&nbsp;Diane Samélor,&nbsp;Hugues Vergnes,&nbsp;Brigitte Caussat,&nbsp;Alain Gleizes,&nbsp;Constantin Vahlas","doi":"10.1002/cvde.201507190","DOIUrl":null,"url":null,"abstract":"<div>\n \n \n <section>\n \n <p>We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O<sub>2</sub> gas, and at low temperature (150–300 °C) with the addition of H<sub>2</sub>O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507190","citationCount":"7","resultStr":"{\"title\":\"A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)†\",\"authors\":\"Loïc Baggetto,&nbsp;Cédric Charvillat,&nbsp;Jérôme Esvan,&nbsp;Yannick Thébault,&nbsp;Diane Samélor,&nbsp;Hugues Vergnes,&nbsp;Brigitte Caussat,&nbsp;Alain Gleizes,&nbsp;Constantin Vahlas\",\"doi\":\"10.1002/cvde.201507190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n \\n <section>\\n \\n <p>We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O<sub>2</sub> gas, and at low temperature (150–300 °C) with the addition of H<sub>2</sub>O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201507190\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文介绍了在高温(500-700℃)和低温(150-300℃)下,在加入O2的条件下,用二甲基异丙醇铝直接液相注射CVD氧化铝和碳化氧薄膜。获得了典型粗糙度值低于2 nm的非常光滑的薄膜。薄膜是由非晶材料构成的。在较低的沉积温度(150-300°C)下,组成成分从部分氢氧化物演变为化学计量氧化物,在较高的沉积温度(500-700°C)下,从化学计量氧化物演变为氧化物与(氧)碳化物的混合物。
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A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)†

We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O2 gas, and at low temperature (150–300 °C) with the addition of H2O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).

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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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