LTE供电的BLE到WiFi反向散射芯片实现单设备询问类RFID系统

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2023-08-11 DOI:10.1109/LSSC.2023.3304305
Shih-Kai Kuo;Manideep Dunna;Hongyu Lu;Akshit Agarwal;Dinesh Bharadia;Patrick P. Mercier
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引用次数: 0

摘要

这封信介绍了一种反向散射芯片,该芯片通过LTE信号供电,并将入射的反向白化蓝牙低能量(BLE)类音调广告包反射到可配置WiFi信道位置的再辐射单边带(SSB)802.11b WiFi包中,所有这些都是为了实现类RFID单设备询问系统。该芯片包括一个射频能量采集器、一个WiFi唤醒接收器、一个中频(IF)环形振荡器和一个QPSK SSB反向散射调制器,中频环形振荡器的频率通过逐次逼近寄存器(SAR)频率锁定环(FLL)进行校准。在65 nm CMOS中实现,该芯片在唤醒模式下消耗4.5-$\mu\text{W}$功率,在反向散射模式下消耗11~45~\mu\text{W}$功率,片上环形振荡器频率范围从33到253 MHz,以支持八种不同的BLE到WiFi反向散射方案。无线测量表明,芯片可以充电到1V,然后在长达50厘米的芯片外存储电容器上在1秒内反向散射。
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LTE-Powered BLE-to-WiFi Backscattering Chip Toward Single-Device Interrogation RFID-Like Systems
This letter presents a backscattering chip that is powered via LTE signals and reflects an incident reverse-whitened Bluetooth low energy (BLE) tone-like advertisement packet into a reradiated single-side-band (SSB) 802.11 b WiFi packet at a configurable WiFi channel location, all toward enabling an RFID-like single-device interrogation system. The chip includes an RF energy harvester, a WiFi wake-up receiver, an intermediate frequency (IF) ring oscillator whose frequency is calibrated with a successive-approximation-register (SAR) frequency-lock-loop (FLL), and a QPSK SSB backscatter modulator. Implemented in 65-nm CMOS, the chip consumes 4.5- $\mu \text{W}$ power in wake-up mode and 11 to $45~\mu \text{W}$ power in backscatter mode, with on-chip ring oscillator frequencies ranging from 33 to 253 MHz in order to support eight different BLE-to-WiFi backscatter schemes. Wireless measurement showed that the chip can be charged to 1 V before backscattering within 1 s on a 1- $\mu \text{F}$ off-chip storage capacitor up to a 50-cm distance.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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