标准迁移率模型在纳米FD-SOI mosfet TCAD模拟中的应用和局限性

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2015-05-26 DOI:10.1155/2015/460416
A. Ciprut, A. Chelly, A. Karsenty
{"title":"标准迁移率模型在纳米FD-SOI mosfet TCAD模拟中的应用和局限性","authors":"A. Ciprut, A. Chelly, A. Karsenty","doi":"10.1155/2015/460416","DOIUrl":null,"url":null,"abstract":"TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (). TCAD tools do not usually consider to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2015 1","pages":"1-9"},"PeriodicalIF":1.3000,"publicationDate":"2015-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/460416","citationCount":"5","resultStr":"{\"title\":\"Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs\",\"authors\":\"A. Ciprut, A. Chelly, A. Karsenty\",\"doi\":\"10.1155/2015/460416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (). TCAD tools do not usually consider to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.\",\"PeriodicalId\":43355,\"journal\":{\"name\":\"Active and Passive Electronic Components\",\"volume\":\"2015 1\",\"pages\":\"1-9\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2015-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2015/460416\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Active and Passive Electronic Components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2015/460416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2015/460416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 5

摘要

在过去的几十年里,TCAD工具得到了很大的改进,以支持过程和设备的互补模拟,这些模拟通常基于随着技术进步而不断开发的模型。在本文中,我们比较了两种纳米级器件:超薄体(UTB)和纳米体(NSB) SOI-MOSFET器件的实验和TCAD模拟结果,它们具有相同的W/L比,但通道厚度比为10:1(分别为46 nm和4.6 nm)。实验中发现的I-V转移特性有几个数量级的惊人差异。我们通过考虑严重的迁移率退化和大栅极电压相关串联电阻()的影响来分析这一结果。TCAD工具通常不考虑通道厚度或栅极电压依赖。在观察到从我们的测量中提取的迁移率值与现有的TCAD模型之间的明显差异后,我们提出了一种新的半经验方法来模拟迁移特征。
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Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (). TCAD tools do not usually consider to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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