{"title":"不同厚度溅射氧化铟锡薄膜的电阻率、残余应力和表面粗糙度评价","authors":"Chuen-Lin Tien, Tsai-Wei Lin, Shu-Hui Su","doi":"10.37190/oa210403","DOIUrl":null,"url":null,"abstract":"This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.","PeriodicalId":19589,"journal":{"name":"Optica Applicata","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses\",\"authors\":\"Chuen-Lin Tien, Tsai-Wei Lin, Shu-Hui Su\",\"doi\":\"10.37190/oa210403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.\",\"PeriodicalId\":19589,\"journal\":{\"name\":\"Optica Applicata\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2021-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optica Applicata\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.37190/oa210403\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optica Applicata","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.37190/oa210403","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses
This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.
期刊介绍:
Acoustooptics, atmospheric and ocean optics, atomic and molecular optics, coherence and statistical optics, biooptics, colorimetry, diffraction and gratings, ellipsometry and polarimetry, fiber optics and optical communication, Fourier optics, holography, integrated optics, lasers and their applications, light detectors, light and electron beams, light sources, liquid crystals, medical optics, metamaterials, microoptics, nonlinear optics, optical and electron microscopy, optical computing, optical design and fabrication, optical imaging, optical instrumentation, optical materials, optical measurements, optical modulation, optical properties of solids and thin films, optical sensing, optical systems and their elements, optical trapping, optometry, photoelasticity, photonic crystals, photonic crystal fibers, photonic devices, physical optics, quantum optics, slow and fast light, spectroscopy, storage and processing of optical information, ultrafast optics.