气团离子束轰击提高a-C膜中sp3含量XPS和NEXAFS研究

N. Toyoda, Asahi Kimura, I. Yamada
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引用次数: 4

摘要

采用气簇离子束(GCIB)对非晶碳(a-C)或四面体碳(ta-C)薄膜进行表面改性,并通过真空XPS和近边x射线吸收精细结构(NEXAFS)测量来评价sp2/sp3比。由于GCIB的动能沉积在局部区域,导致表面形成高能量密度态。XPS分析表明,碳膜中sp3含量随加速电压(Va)的增加而增加,在Va为10 kV时达到最高值。NEXAFS测定也表明,在Va为10 kV时,sp2含量降低。GCIB辐照有助于在非晶碳表面形成富sp3层。
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Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study
Gas cluster ion beams (GCIB) were used for surface modification of amorphous carbon (a-C) or tetrahedral carbon (ta-C) films, and in-vacuum XPS and near edge X-ray absorption fine structure (NEXAFS) measurements were carried out for evaluation of sp2/sp3 ratio. Since GCIB deposit its kinetic energy at local area, it leads to formation of high energy density state on surface. From XPS analysis, it was shown that sp3 contents in carbon films increased with increasing acceleration voltage (Va) and it showed highest value at Va of 10 kV. NEXAFS measurements also showed decrease of sp2 content at Va of 10 kV. GCIB irradiations can assist to form sp3 rich layer on amorphous carbon surface.
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