Comparison and evaluation of the thermal performance between SiC-MOSFET and Si-IGBT

The power modules become one of the most fragile and vulnerable components. To address this problem, the thermal performance of silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) and silicon insulated gate bipolar transistor (Si-IGBT) is compared and evaluated in this paper. Firstly, the loss calculations and distribution of SiC-MOSFET and Si-IGBT are analyzed. Next, the junction temperature swing of SiC-MOSFET and Si-IGBT is calculated by the thermal resistance network method, and the analysis of the junction temperature swing at different influencing factors is elaborated. Then, a thermal platform based on optical fiber thermometer is built and experimental results are provided to validate the claims. Finally, the thermal properties of SiC-MOSFET and Si-IGBT are summarized to provide the theoretical reference for engineering applications.