{"title":"基于1D SiN/Air光子晶体的温度传感器","authors":"S. Dinodiya, B. Suthar, A. Bhargava","doi":"10.1109/ICP46580.2020.9206476","DOIUrl":null,"url":null,"abstract":"A temperature sensor based on a one-dimensional photonic crystal of silicon nitride is proposed. Working principle of the sensor depends upon the change in photonic band gap by variation in refractive index with temperature. In this work, a temperature dependent photonic band structure in SiN/air multilayer system is presented. Simulation results are obtained by applying transfer matrix method.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"13 1","pages":"111-112"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature Sensor based on 1D SiN/Air Photonic Crystal\",\"authors\":\"S. Dinodiya, B. Suthar, A. Bhargava\",\"doi\":\"10.1109/ICP46580.2020.9206476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A temperature sensor based on a one-dimensional photonic crystal of silicon nitride is proposed. Working principle of the sensor depends upon the change in photonic band gap by variation in refractive index with temperature. In this work, a temperature dependent photonic band structure in SiN/air multilayer system is presented. Simulation results are obtained by applying transfer matrix method.\",\"PeriodicalId\":6758,\"journal\":{\"name\":\"2020 IEEE 8th International Conference on Photonics (ICP)\",\"volume\":\"13 1\",\"pages\":\"111-112\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 8th International Conference on Photonics (ICP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICP46580.2020.9206476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 8th International Conference on Photonics (ICP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICP46580.2020.9206476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature Sensor based on 1D SiN/Air Photonic Crystal
A temperature sensor based on a one-dimensional photonic crystal of silicon nitride is proposed. Working principle of the sensor depends upon the change in photonic band gap by variation in refractive index with temperature. In this work, a temperature dependent photonic band structure in SiN/air multilayer system is presented. Simulation results are obtained by applying transfer matrix method.
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