{"title":"结构参数对InGaAs/InAlAs 2DEG特性的影响","authors":"M. Tischler, B. D. Parker, M. Goorsky, P. Mooney","doi":"10.1109/ICIPRM.1991.147342","DOIUrl":null,"url":null,"abstract":"It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"85 1","pages":"224-227"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics\",\"authors\":\"M. Tischler, B. D. Parker, M. Goorsky, P. Mooney\",\"doi\":\"10.1109/ICIPRM.1991.147342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"85 1\",\"pages\":\"224-227\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics
It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<>
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