B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho
{"title":"高速InGaAs HBT器件和电路","authors":"B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho","doi":"10.1109/ICIPRM.1991.147343","DOIUrl":null,"url":null,"abstract":"An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"228-233"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High speed InGaAs HBT devices and circuits\",\"authors\":\"B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho\",\"doi\":\"10.1109/ICIPRM.1991.147343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"13 1\",\"pages\":\"228-233\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<>
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