oeic中高性能扩散InGaAs jfet

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147461

C. Mansfield, D. Newson, P. Birdsall, J. Quayle

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摘要

讨论了用于垂直集成光电集成电路(OEICs)的高均匀扩散InGaAs jfet的发展。该器件已经集成了PIN二极管和脊波导激光器。讨论了OEIC的制造和OEIC接收机的性能。

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High performance diffused InGaAs JFETs in OEICs

The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics High speed InGaAs HBT devices and circuits High performance diffused InGaAs JFETs in OEICs Current-controlled liquid phase epitaxy of InAsP on InP substrates High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers