CIGS吸波器厚度和梯度带隙对器件性能影响的研究

Ranran Han, Zugang Liu, Qianmin Dong
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引用次数: 0

摘要

本文利用wxAMPS软件对钠石灰玻璃衬底/Mo薄膜底电极/CIGS吸收层/CdS缓冲层/i-ZnO薄膜高阻层/AZO薄膜透明导电层结构的铜铟镓硒(CIGS)薄膜太阳能电池进行了参数变化对器件性能影响的模拟计算。在不同的吸收层厚度下,模拟了太阳能电池中CIGS薄膜吸收层带隙的梯度分布。通过计算不同位置最小带隙的器件效率,我们发现该模型最适合的最小带隙位置在前吸收层附近,吸收层厚度为1.5um时的器件效率与2um时的器件效率相近,说明溶液法的薄吸收层是有效的。
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Study of CIGS Absorber Thickness and Gradient Bandgap effect on Device Performance
This paper uses wxAMPS software to carry out simulation calculation about the influence of parameter changes on device performance of copper indium gallium selenide (CIGS) thin film solar cell, with structure of soda lime glass substrate/Mo thin film bottom electrode/CIGS absorber layer/CdS buffer layer/i-ZnO thin film high resistance layer/AZO thin film transparent conductive layer. With different absorption layer thickness, we simulate the gradient distribution of the band gap of the CIGS thin-film absorption layer in the solar cell. By calculating the device efficiency with the minimum band gap at different positions, we have found the most suitable position of the minimum band gap for this model is near the front absorption layer and the device efficiency with absorption layer thickness 1.5um is similar to that of 2um, which means the thin absorption layer of the solution method can be effective.
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