p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs量子阱发射体的光学研究

IF 3.9 Q2 NANOSCIENCE & NANOTECHNOLOGY Journal of Nanotechnology Pub Date : 2022-04-13 DOI:10.1155/2022/7971119

I. Guizani, C. Bilel, Malak Alrowaili, A. Rebey

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引用次数: 0

摘要

我们利用自一致计算结合反交叉模型研究了p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs量子阱的1.55 μm光学特性。我们发现注入载流子密度的增加会引起光增益和辐射电流密度的增加。掺杂密度的增加会引起基本跃迁能量的蓝移，同时光学增益显著增加。研究了辐射电流密度的量子受限Stark效应。研究了辐射电流随井宽和Sb组分的变化规律。为了操作光纤通信域的发射波长，我们调整了p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs的阱参数。

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Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

We have studied the 1.55 μm optical properties of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs quantum wells using a self-consistent calculation combined with the anticrossing model. We have found that the increase of injected carriers’ density induces the increase of optical gain and radiative current density. The rise of doping density causes a blue shift of the fundamental transition energy accompanied with significant increase of optical gain. The quantum-conﬁned Stark effect on radiative current density is also studied. The variation of radiative current as function of well width and Sb composition is also examined. In order to operate the emission wavelength at the optical fiber telecommunication domain, we have adjusted the well parameters of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs.

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