{"title":"神经形态计算:从设备到集成电路","authors":"V. Saxena","doi":"10.1116/6.0000591","DOIUrl":null,"url":null,"abstract":"A variety of nonvolatile memory (NVM) devices including the resistive Random Access Memory (RRAM) are currently being investigated for implementing energy-efficient hardware for deep learning and artificial intelligence at the edge. RRAM devices are employed in the form of dense crosspoint or crossbar arrays. In order to exploit the high-density and low-power operation of these devices, circuit designers need to accommodate their nonideal behavior and consider their impact on circuit design and algorithm performance. Hybrid integration of RRAMs with standard CMOS technology is spurring the development of large-scale neuromorphic system-on-a-chip. This review article provides an overview of neuromorphic integrated circuits (ICs) using hybrid CMOS-RRAM integration with an emphasis on spiking neural networks (SNNs), device nonidealities, their associated circuit design challenges, and potential strategies for their mitigation. An overview of various SNN learning algorithms and their codevelopment with devices and circuits is discussed. Finally, a comparison of NVM-based fully integrated neuromorphic ICs is presented along with a discussion on their future evolution.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Neuromorphic computing: From devices to integrated circuits\",\"authors\":\"V. Saxena\",\"doi\":\"10.1116/6.0000591\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A variety of nonvolatile memory (NVM) devices including the resistive Random Access Memory (RRAM) are currently being investigated for implementing energy-efficient hardware for deep learning and artificial intelligence at the edge. RRAM devices are employed in the form of dense crosspoint or crossbar arrays. In order to exploit the high-density and low-power operation of these devices, circuit designers need to accommodate their nonideal behavior and consider their impact on circuit design and algorithm performance. Hybrid integration of RRAMs with standard CMOS technology is spurring the development of large-scale neuromorphic system-on-a-chip. This review article provides an overview of neuromorphic integrated circuits (ICs) using hybrid CMOS-RRAM integration with an emphasis on spiking neural networks (SNNs), device nonidealities, their associated circuit design challenges, and potential strategies for their mitigation. An overview of various SNN learning algorithms and their codevelopment with devices and circuits is discussed. Finally, a comparison of NVM-based fully integrated neuromorphic ICs is presented along with a discussion on their future evolution.\",\"PeriodicalId\":17652,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0000591\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0000591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

包括电阻式随机存取存储器(RRAM)在内的各种非易失性存储器(NVM)设备目前正在研究中,以实现用于边缘深度学习和人工智能的节能硬件。RRAM器件以密集的交叉点或交叉条阵列的形式使用。为了开发这些器件的高密度和低功耗操作,电路设计者需要适应它们的非理想行为,并考虑它们对电路设计和算法性能的影响。rram与标准CMOS技术的混合集成促进了大规模神经形态片上系统的发展。这篇综述文章概述了使用混合CMOS-RRAM集成的神经形态集成电路(ic),重点是尖峰神经网络(snn)、器件非理想性、相关电路设计挑战以及缓解这些问题的潜在策略。概述了各种SNN学习算法及其与器件和电路的共同发展。最后,对基于nvm的全集成神经形态集成电路进行了比较,并讨论了它们的未来发展。
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Neuromorphic computing: From devices to integrated circuits
A variety of nonvolatile memory (NVM) devices including the resistive Random Access Memory (RRAM) are currently being investigated for implementing energy-efficient hardware for deep learning and artificial intelligence at the edge. RRAM devices are employed in the form of dense crosspoint or crossbar arrays. In order to exploit the high-density and low-power operation of these devices, circuit designers need to accommodate their nonideal behavior and consider their impact on circuit design and algorithm performance. Hybrid integration of RRAMs with standard CMOS technology is spurring the development of large-scale neuromorphic system-on-a-chip. This review article provides an overview of neuromorphic integrated circuits (ICs) using hybrid CMOS-RRAM integration with an emphasis on spiking neural networks (SNNs), device nonidealities, their associated circuit design challenges, and potential strategies for their mitigation. An overview of various SNN learning algorithms and their codevelopment with devices and circuits is discussed. Finally, a comparison of NVM-based fully integrated neuromorphic ICs is presented along with a discussion on their future evolution.
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