Effect of deposition temperature and heat treatment on properties of AZO nanolamination films

Firstly, the AZO nanolaminated films are prepared on quartz and n-doped Si(100) substrate by atomic layer deposition (ALD). And the surface morphology, crystal structure and electrical properties of the films are analyzed and characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and high resistance tester. Thereafter the paper the effects of different substrate temperature is compared with heat treatment process on the structure and properties of the films. The effects of substrate temperature and annealing temperature on the structure and properties of the films are studied. Finally, the results of research indicates that the AZO nanolaminated film has a suitable temperature window. When the substrate temperature at least 170°C which meets the requirement of microchannel plate (MCP) dynode conductive layer film. At the same time, the resistivity of the film increases accordingly with temperature of annealing increasing, as proper annealing can help the structure of the film optimizing. The thin film resistance is supposed to be stable at 400°C annealing for 4h, which means it can be regarded as the option of MCP dynode conductive layer films in the future.