{"title":"用微致动器照明改变多层过渡金属二硫化物的附着力","authors":"N. I. Mou, M. Tabib-Azar","doi":"10.1109/TRANSDUCERS.2015.7181201","DOIUrl":null,"url":null,"abstract":"Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS<sub>2</sub>, NbS<sub>2</sub>, n-type WSe<sub>2</sub>, MoS<sub>2</sub>, p-type MoSe<sub>2</sub>, TaS<sub>2</sub>) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe<sub>2</sub>, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO<sub>2</sub> on Si and 100 nm Au on SiO<sub>2</sub>/Si. NbS<sub>2</sub> and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modification of adhesion forces in multiple layers of transition metal dichalcogenides using illumination for micro-actuators\",\"authors\":\"N. I. Mou, M. Tabib-Azar\",\"doi\":\"10.1109/TRANSDUCERS.2015.7181201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS<sub>2</sub>, NbS<sub>2</sub>, n-type WSe<sub>2</sub>, MoS<sub>2</sub>, p-type MoSe<sub>2</sub>, TaS<sub>2</sub>) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe<sub>2</sub>, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO<sub>2</sub> on Si and 100 nm Au on SiO<sub>2</sub>/Si. NbS<sub>2</sub> and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.\",\"PeriodicalId\":6465,\"journal\":{\"name\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2015.7181201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2015.7181201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modification of adhesion forces in multiple layers of transition metal dichalcogenides using illumination for micro-actuators
Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS2, NbS2, n-type WSe2, MoS2, p-type MoSe2, TaS2) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe2, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO2 on Si and 100 nm Au on SiO2/Si. NbS2 and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.
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