{"title":"在高效反激拓扑中开发GaN场效应管技术:不同架构的优缺点","authors":"Fabio Cacciotto, A. Cannone","doi":"10.23919/AEIT50178.2020.9241139","DOIUrl":null,"url":null,"abstract":"In this paper the potential of the GaN technology in the realization of high efficiency converters is dealt in detail, and different flyback topologies that exploit its characteristics are analyzed in terms of efficiency performance. Finally, pros and cons of each topology are discussed in detail.","PeriodicalId":6689,"journal":{"name":"2020 AEIT International Annual Conference (AEIT)","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Exploit GaN FET technologies in high efficiency flyback topologies: pros and cons of different architectures\",\"authors\":\"Fabio Cacciotto, A. Cannone\",\"doi\":\"10.23919/AEIT50178.2020.9241139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the potential of the GaN technology in the realization of high efficiency converters is dealt in detail, and different flyback topologies that exploit its characteristics are analyzed in terms of efficiency performance. Finally, pros and cons of each topology are discussed in detail.\",\"PeriodicalId\":6689,\"journal\":{\"name\":\"2020 AEIT International Annual Conference (AEIT)\",\"volume\":\"1 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 AEIT International Annual Conference (AEIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AEIT50178.2020.9241139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 AEIT International Annual Conference (AEIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AEIT50178.2020.9241139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Exploit GaN FET technologies in high efficiency flyback topologies: pros and cons of different architectures
In this paper the potential of the GaN technology in the realization of high efficiency converters is dealt in detail, and different flyback topologies that exploit its characteristics are analyzed in terms of efficiency performance. Finally, pros and cons of each topology are discussed in detail.
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