{"title":"高压电容器用陶瓷介质击穿机理研究","authors":"Wan Rongen, Chen Shoutian","doi":"10.1109/ICPADM.1991.172257","DOIUrl":null,"url":null,"abstract":"Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"95 1","pages":"1061-1063 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"On the mechanism of dielectric breakdown of ceramic for HV capacitors\",\"authors\":\"Wan Rongen, Chen Shoutian\",\"doi\":\"10.1109/ICPADM.1991.172257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<<ETX>>\",\"PeriodicalId\":6450,\"journal\":{\"name\":\"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials\",\"volume\":\"95 1\",\"pages\":\"1061-1063 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICPADM.1991.172257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPADM.1991.172257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the mechanism of dielectric breakdown of ceramic for HV capacitors
Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<>
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