Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX

FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin's scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.