用高压溅射法制备钆作为高k介电材料

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481331

P. C. Feijoo, M. Pampillón, E. Andrés

{"title":"用高压溅射法制备钆作为高k介电材料","authors":"P. C. Feijoo, M. Pampillón, E. Andrés","doi":"10.1109/CDE.2013.6481331","DOIUrl":null,"url":null,"abstract":"We demonstrate the viability of gadolinium scandate (Gd2-xScxO3) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd2-xScxO3/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScOx and GdOx in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"49 1","pages":"17-20"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Gadolinium scandate by high pressure sputtering as a high-k dielectric\",\"authors\":\"P. C. Feijoo, M. Pampillón, E. Andrés\",\"doi\":\"10.1109/CDE.2013.6481331\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the viability of gadolinium scandate (Gd2-xScxO3) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd2-xScxO3/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScOx and GdOx in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"49 1\",\"pages\":\"17-20\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481331\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们证明了钆氧化盐(Gd2-xScxO3)沉积的可行性，通过高压溅射从其二元化合物(钆和钪氧化物)的目标，然后退火形成气体。制备了Pt/ 8nm Gd2-xScxO3/n-Si MIS器件并进行了表征。钆酸盐在与Si接触时比ScOx和GdOx更稳定。这三种介质具有高质量的接口，漏电流低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Gadolinium scandate by high pressure sputtering as a high-k dielectric

We demonstrate the viability of gadolinium scandate (Gd_2-xSc_xO₃) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd_2-xSc_xO₃/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO_x and GdO_x in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 Spanish Conference on Electron Devices

自引率

0.00%

发文量

期刊最新文献

CMOS VCO design optimization using reliable 3D electromagnetic inductor models Gadolinium scandate by high pressure sputtering as a high-k dielectric Macroporous silicon microreactor for the preferential oxidation of CO Trends in crystalline silicon growth for low cost and efficient photovoltaic cells Nanohole particle filling by electrospray