{"title":"化学气相沉积法制备Zn 2 GeO 4 纳米线及其发光性质的研究","authors":"周政, 李金华, 方芳, 楚学影, 方铉, 魏志鹏, 王晓华","doi":"10.3788/CO.20140702.0281","DOIUrl":null,"url":null,"abstract":"Ternary Zn2GeO4nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm × 1 cm silicon wafer sputtered by metal Au catalyst.Zn2GeO4structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8∶ 1wt% as the X-ray diffraction(XRD) shown.The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 μm.The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm,respectively.Finally,the growth mechanism of the Zn2GeO4nanowires was analyzed.","PeriodicalId":10133,"journal":{"name":"Chinese Journal of Optics and Applied Optics","volume":"19 1","pages":"281-286"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"化学气相沉积法制备Zn 2 GeO 4 纳米线及其发光性质的研究\",\"authors\":\"周政, 李金华, 方芳, 楚学影, 方铉, 魏志鹏, 王晓华\",\"doi\":\"10.3788/CO.20140702.0281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ternary Zn2GeO4nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm × 1 cm silicon wafer sputtered by metal Au catalyst.Zn2GeO4structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8∶ 1wt% as the X-ray diffraction(XRD) shown.The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 μm.The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm,respectively.Finally,the growth mechanism of the Zn2GeO4nanowires was analyzed.\",\"PeriodicalId\":10133,\"journal\":{\"name\":\"Chinese Journal of Optics and Applied Optics\",\"volume\":\"19 1\",\"pages\":\"281-286\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Journal of Optics and Applied Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3788/CO.20140702.0281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Optics and Applied Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3788/CO.20140702.0281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ternary Zn2GeO4nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm × 1 cm silicon wafer sputtered by metal Au catalyst.Zn2GeO4structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8∶ 1wt% as the X-ray diffraction(XRD) shown.The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 μm.The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm,respectively.Finally,the growth mechanism of the Zn2GeO4nanowires was analyzed.
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