光刻热点检测采用双启始模块架构

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-03-22 DOI:10.1117/1.JMM.18.1.013507
J. Chen, Yibo Lin, Yufeng Guo, Maolin Zhang, M. Alawieh, D. Pan
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引用次数: 11

摘要

摘要随着半导体器件特征尺寸的缩小,制造挑战急剧增加。在这些挑战中,光刻热点作为设计和制造之间日益扩大的差距的突出分支而脱颖而出。实际上,热点是指在平版印刷中打印所需图案的失败。由于光刻热点对制造成品率有重大影响,因此希望在设计早期就检测到热点,以实现快速设计。我们提出了一种采用双启始模块结构的光刻热点检测框架。该结构通过扩大传统的堆叠结构有利于特征提取,并使用全局平均池化来保留空间信息,在准确性和虚警方面都有更好的表现。实验结果表明,该结构比现有方法具有更好的性能。
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Lithography hotspot detection using a double inception module architecture
Abstract. With the shrinking feature sizes of semiconductor devices, manufacturing challenges increase dramatically. Among these challenges, lithography hotspot stands out as a prominent ramification of the growing gap between design and manufacturing. Practically, a hotspot refers to the failure in printing desired patterns in lithography. As lithography hotspots have significant impacts on manufacturing yield, the detection of hotspots in the early design stage is desired to achieve fast design closure. We propose a lithography hotspot detection framework using a double inception module structure. This structure performs better in both accuracy and false alarms by widening the conventional stacked structure to benefit feature extraction and using global average pooling to keep the spatial information. Experimental results show that the proposed structure achieves better performance than existing methods.
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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