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引用次数: 7
摘要
我们提出了一种扩展范围的Doherty功率放大器(DPA)，使用一种新的负载阻抗范围来实现9 db功率回退(PBO)的高效率。所提出的负载阻抗范围使辅助晶体管能够提供更大的电流，从而使对称器件可以用于DPA，并产生紧凑和低损耗的输出组合电路。已经开发了一个使用3.5 GHz氮化镓高电子迁移率晶体管(GaN hemt)的20瓦DPA来演示该概念。测量结果显示，在42.9 dBm饱和输出功率下，功率附加效率(PAE)为69%，在9 dB PBO下，PAE为55%，增益为12 dB。我们认为，我们提出的DPA在已报道的GaN DPA中具有最高的9 db PBO PAE，为55%。
An extended symmetric doherty power amplifier with high efficiency over a wide power range
We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA's.
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